Dr C Rodenburg (nee Schönjahn)

University Teacher
Dipl. Ing (FH), PhD

Address:
Department of Materials Science and Engineering
Sir Robert Hadfield Building
Mappin Street, Sheffield, S1 3JD

Telephone: +44 (0) 114 222 5921
Fax: +44 (0) 114 222 5943

Email: c.rodenburg@sheffield.ac.uk

Dr Rodenburg was awarded a Royal Society Dorothy Hodgkin Fellowship entitled "Applications of MEMS electrostatic manipulation in SEM and materials science" which she took up in 2006. She has now been employed as a University Teacher in the Department of Materials science and Engineering.

Research Interests

Current research interests:

• Two- and three- dimensional quantitative dopant mapping in the scanning electron microscope (in collaboration with University of Cambridge, Department of Materials Science & Metallurgy)
• Contrast mechanism in low voltage scanning electron microscopes and helium ion microscopes
• Electrostatic manipulation of micro-and nano objects by electrostatic fields in a scanning electron microscope

Previous research interests:

• Energy filtered imaging in the scanning electron microscope
• The role of the substrate/coating interface of ceramic hard coatings for dry high speed cutting applications
• Influence of carbide distributions on properties and wear of high speed steels

Selected Publications

• C. Rodenburg, M.A.E, Jepson, E. Bosch and M. Dapor  ‘Energy selective scanning electron microscopy to reduce the effect of contamination layers on Scanning Electron Microscope Dopant Mapping’, Ultramicroscopy 110 (2010) 1185-1191.
• C. Rodenburg, X. Liu, M.A.E, Jepson , Z.Zhou, W.M. Rainforth, J.M. Rodenburg ‘The role of helium ion microscopy in the characterisation of complex three-dimensional nanostructures’, Ultramicroscopy 110 (2010) 1178-1184.
• M. A. E. Jepson, B. J. Inkson, Xiong Liu, L. Scipioni and C. Rodenburg: 'Quantitative dopant contrast in the helium ion microscope', EPL, 86 (2009) 26005.
• P. Kazemian, S.A.M. Mentik, C. Rodenburg, C. J Humphreys, 'High resolution quantitative two-dimensional dopant mapping using energy filtered secondary electron imaging'. Journal of Applied Physics 100 (2006) 054901.
• C. Rodenburg and M. Rainforth, 'The influence of beam energy and oxidation on quantitative carbide analysis in the scanning electron microscope'. Journal of Applied Physics 100 (2006) 114902.
• P. Kazemiam, A.C. Twitchett, C. J Humphreys, C. Rodenburg. 'Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens'. Applied Physics Letters 88 (2006) 212110.
• B. Kaestner, C. Schönjahn, C.J. Humphreys. 'Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope'. Applied Physics Letters 84 (2004) 2109-2111.
• C. Schönjahn, R.F. Broom, C.J. Humphreys, A. Howie, S. A. M. Mentink. 'Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector'. Applied Physics Letters. 83(2) (2003) 293-295.
• C. Schönjahn, C.J. Humphreys, M. Glick. 'Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors'. Journal of Applied Physics. 92 (2002) 7667-71.