Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition
The Centre for GaN Materials and Devices has published a new paper in Applied Physics Letters. It provides a deep insight into the optical properties of semi-polar AlGaN, which is of significant importance to the development of semi-polar AlGaN based deep ultra-violet (DUV) laser diodes (LDs).
Read the full text: Appl. Phys. Lett. 110, 091102 (2017);
For more information please visit the Centre for GaN Materials and Devices website: gancentre.group.shef.ac.uk