Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue
The Centre for GaN Materials and Devices has published a new paper in Applied Physics Letters. The results indicate that our overgrowth method is an effective way to both release the strain and improve the crystal quality, which plays an important role in developing semi-polar DUV emitters with a step-change in optical performance.
Read the full text: Appl. Phys. Lett. 110, 082103 (2017);
For more information please visit the Centre for GaN Materials and Devices website: gancentre.group.shef.ac.uk