Kean Boon Lee

PhD, MEng

Department of Electronic and Electrical Engineering

Senior Lecturer in GaN Electronic Devices

Semiconductor Materials and Devices Research Group

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+44 114 222 5836

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Kean Boon Lee
Department of Electronic and Electrical Engineering

I graduated from the Department (M.Eng 2004, Ph.D. 2010). After 2 years as a post-doctoral research associate working on gallium nitride (GaN) electronic devices for radio-frequency (RF) applications at the Department, I moved to Singapore and joined Institute of Microelectronics as a scientist.

I spent a year and a half at Singapore to develop next generation 600V high power GaN transistors for power conversion applications.

In 2013, I returned to this department and I am currently a lecturer in GaN Electronic Devices.

My main research interest is on GaN semiconductor material and devices for both optoelectronic and electronic applications.

Visible light emitting diodes (LEDs) found in solid-state light bulbs and TV screens are mainly made from GaN. In addition to visible light, GaN is also capable in emitting ultra- violet (UV) light efficiently which can be used in applications such as water purifications.

I have spent nearly 4 years in my PhD working in this area and our group has demonstrated the first GaN-based UV LEDs in the UK.

My current research focuses on utilising GaN in electronics applications including radio-frequency (such as amplifiers in 5G mobile communications and military radars) and high speed power conversion (such as 48V-1kV DC power supplies, inverters for photovoltaic systems).

I am particularly interested in employing novel integration techniques to achieve high efficiency GaN electronic devices and systems.

I am a member of committee of the UK Nitrides Consortium and program committee member for UK Semiconductor Conference.

  • PhD in Electronic and Electrical Engineering, University of Sheffield, UK
  • MEng in Electronic Engineering (Solid State Devices), University of Sheffield, UK
Research interests
  • High voltage and high current AlGaN/GaN-based transistors
  • High speed/frequency RF GaN transistors
  • High temperature operation of GaN-based transistors
  • Monolithic integrations of GaN electronics
  • Novel vertical high voltage (>600V) GaN transistors
  • UV LEDs (wavelength: 250-350nm) design and device fabrication

Journal articles

Conference proceedings papers

Teaching activities
  • Lecturer in GaN Electronic Devices