Professor Tao Wang
PhD, MSc, BSc
Department of Electronic and Electrical Engineering
Professor in Advanced Opto-Electronics
Director of Centre for GaN Materials and Devices
t.wang@sheffield.ac.uk
+44 114 222 5902
+44 114 222 5902
Full contact details
Professor Tao Wang
Department of Electronic and Electrical Engineering
Department of Electronic and Electrical Engineering
- Profile
-
I received my BSc degree at USTB, MSc degree at CAS and PhD degree at University of Würbzurg in Germany.
I am a professor as Chair in Advanced Opto-Electronics at the University of Sheffield. I am Director of the Sheffield Centre for GaN Materials and Devices and co-Director of the Joint Research Centre for Wide Bandgap Optoelectronics.
I started III-nitride semiconductor research at the University of Tokushima in Japan in 1997, and then worked at Nitride Semiconductor Ltd. in Tokushima as the R & D director from 2000 to 2002. I joined the University of Sheffield in 2002.
I was awarded “EPSRC Advanced Research Fellow” in 2005. I co-founded Seren Photonics Ltd., a III-nitride semiconductor company in 2009, which was awarded the “Royal Society Emerging Technology Award” in 2015.
My research interests are in the areas of III-nitride semiconductors, large lattice-mismatch epitaxial growth, epitaxial overgrowth on patterned substrates, nanophotonics, electronics, hybrid III-nitrides/organic optoelectronics, integration of photonics & electronics, solar energy devices, etc.
I am regularly involved in organising international conferences including the Chair of 16th International Symposium on the Science and Technology of Lighting in 2018.
I chaired the International Summer School on III-nitride Optoelectronics in 2012. I initiated and chaired the 1st China-UK workshop on GaN Materials and Devices in 2018.
I have ~ 450 publications including 5 book chapters, >220 journal papers and >220 conference papers/presentations. I regularly deliver key-note and invited talks at international conferences.
I hold 20 patents in the UK, USA, Japan and Europe. The research innovations are frequently highlighted in major semiconductor magazines.
I serve as an Editorial Board Member of Nature Family Journal-Scientific Reports.
I also regularly serve as a referee for a large number of journals and publishers such as Nature Photonics; Nature Nanotechnology; Nature Communications; CRC Press, Cambridge Press, etc. So far (until December 2018), I have supervised ~50 Postdoctoral Research Associates and PhD students in total.
One of my PhD students was awarded the “Chinese Government Award for Outstanding Chinese Students Abroad” in 2009.
- Qualifications
-
- PhD (Physics), University of Würzburg, Germany
- MSc (Physics), Chinese Academy of Science, China
- BSc (Physics), University of Science and Technology of Beijing, China
- Research interests
-
- Epitaxy of III-nitride Semiconductors and Devices
- Metalorganic Vapour Phase Epitaxy (MOVPE)
- Novel Nano III-nitride Photonics and Electronics
- Epitaxial Integration of Photonics and Electronics
- Hybrid III-nitrides/organic Optoelectronics
- Flexible III-nitride Photonics and Electronics
- Publications
-
Journal articles
- Ga2O3/GaN heterostructural ultraviolet photodetectors with exciton-dominated ultranarrow response. ACS Applied Electronic Materials.
- Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells. Journal of Applied Physics, 130(20). View this article in WRRO
- Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science.
- Monolithically integrated μLEDs/HEMTs microdisplay on a single chip by a direct epitaxial approach. Advanced Materials Technologies.
- A Tamm plasmon-porous GaN distributed Bragg reflector cavity. Journal of Optics, 23(3).
- Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single micro-LED with a high-modulation bandwidth. ACS Applied Electronic Materials, 3(1), 445-450. View this article in WRRO
- Impact of inductively coupled plasma etching conditions on the formation of semi-polar ( 11 2 ¯ 2 ) and non-polar ( 11 2 ¯ 0 ) GaN nanorods. Nanomaterials, 10(12).
- The 2020 UV emitter roadmap. Journal of Physics D: Applied Physics, 53(50).
- Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN. Journal of Physics D: Applied Physics.
- High modulation bandwidth of semipolar (11–22) InGaN/GaN LEDs with long wavelength emission. ACS Applied Electronic Materials, 2(8), 2363-2368.
- Preferred growth direction of III-V nanowires on differently oriented Si substrates. Nanotechnology.
- Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10(1). View this article in WRRO
- Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano. View this article in WRRO
- Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon. ACS Applied Materials & Interfaces. View this article in WRRO
- Optical polarization properties of (11–22) semi-polar InGaN LEDs with a wide spectral range. Scientific Reports, 10(1). View this article in WRRO
- Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays. Scientific Reports, 10(1). View this article in WRRO
- Explore an approach towards the intrinsic limits of GaN electronics. ACS Applied Materials & Interfaces. View this article in WRRO
- Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology. View this article in WRRO
- InGaN nanohole arrays coated by lead halide perovskite nanocrystals for solid-state lighting. ACS Applied Nano Materials. View this article in WRRO
- Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates. Journal of Applied Physics, 127(3), 035705-1-035705-8. View this article in WRRO
- A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs). ACS Photonics, 7(2), 411-415. View this article in WRRO
- Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Scientific Reports, 9(1). View this article in WRRO
- Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Scientific Reports, 9(1). View this article in WRRO
- Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a). View this article in WRRO
- Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography. Micro & Nano Letters, 14(13), 1322-1327. View this article in WRRO
- Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7(11), B73-B82. View this article in WRRO
- Indium tin oxide nanowires as voltage self-stabilizing supercapacitor electrodes. Journal of Materials Research, 34(18), 3195-3203. View this article in WRRO
- Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope. Nano Letters, 19(6), 3863-3870. View this article in WRRO
- Ultra-energy-efficient photoelectrode using microstriped GaN on Si. ACS Photonics, 6(5), 1302-1306. View this article in WRRO
- 3D ITO-nanowire networks as transparent electrode for all-terrain substrate. Scientific Reports, 9. View this article in WRRO
- Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34(4). View this article in WRRO
- Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates. Scientific Reports, 9. View this article in WRRO
- Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Scientific Reports, 9. View this article in WRRO
- Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Semiconductor Science and Technology, 33(12). View this article in WRRO
- Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor. AIP Advances, 8(11). View this article in WRRO
- Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials, 11(10). View this article in WRRO
- Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10(5). View this article in WRRO
- Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Journal of Applied Physics, 124(6). View this article in WRRO
- Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire. Scientific Reports, 8(1). View this article in WRRO
- Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 123(17). View this article in WRRO
- Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering. Nanotechnology, 29(16). View this article in WRRO
- Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes with Nonradiative Förster Resonance Energy Transfer. ACS Photonics, 5(2), 642-647. View this article in WRRO
- Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm. Solar Energy Materials and Solar Cells, 175, 47-51. View this article in WRRO
- Monolithically multi-color lasing from an InGaN microdisk on a Si substrate. Scientific Reports, 7(1). View this article in WRRO
- Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities. Optics Express, 25(23), 28246-28246. View this article in WRRO
- Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes. Applied Physics Letters, 111(20), 203901-203901. View this article in WRRO
- Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al x Ga1-x N with x up to 0.56.. Sci Rep, 7(1). View this article in WRRO
- Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire. AIP Advances, 7(4), 045009-045009. View this article in WRRO
- Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al
composition. Applied Physics Letters, 110(9). View this article in WRRO
- Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue. Applied Physics Letters, 110(8). View this article in WRRO
- Polarized white light from hybrid organic/III-nitrides grating structures.. Scientific Reports, 7. View this article in WRRO
- Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates. Applied Physics Letters, 109(24). View this article in WRRO
- GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.. Nanotechnology, 27(45). View this article in WRRO
- Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semiconductor Science and Technology, 31(9), 093003-093003. View this article in WRRO
- Influence of strain on emission from GaN-on-Si microdisks. Journal of Physics D: Applied Physics, 49(37), 375103-375103. View this article in WRRO
- Enhanced water splitting with silver decorated GaN photoelectrode. Journal of Physics D: Applied Physics, 49(26), 265601-265601. View this article in WRRO
- Power density dependent photoluminescence spectroscopy and Raman mapping of semi‐polar and polar InGaN/GaN multiple quantum well samples. Physica Status Solidi. C, 13(5-6), 274-277.
- Semi‐polar (11‐22) GaN grown on patterned (113) Si substrate. Physica Status Solidi. C: Current Topics in Solid State Physics, 13(5-6), 190-194.
- Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells. physica status solidi (c), 13(5-6), 297-300.
- A single blue nanorod light emitting diode. Nanotechnology, 27(20). View this article in WRRO
- Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template. AIP Advances, 6(2). View this article in WRRO
- Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells. Solar Energy Materials and Solar Cells, 145, 226-230.
- Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells. Applied Physics Letters, 108(3), 031108-031108. View this article in WRRO
- GaN hemispherical micro-cavities. Applied Physics Letters, 108(3), 031110-031110. View this article in WRRO
- Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. Nanotechnology, 27(1), 015301-015301.
- (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates. Applied Physics Letters, 107(26), 261103-261103.
- Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure. Applied Physics Letters, 107(14), 141110-141110.
- Enhanced non-radiative energy transfer in hybrid III-nitride structures. Applied Physics Letters, 107(12), 121108-121108.
- Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates. Semiconductor Science and Technology, 30(6), 065012-065012.
- Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold. Scientific Reports, 4(1). View this article in WRRO
- Influence of piezoelectric fields on InGaN based intermediate band solar cells. Journal of Physics D: Applied Physics, 48(2), 025101-025101.
- Study of high-quality (11−22) semi-polar GaN grown on nanorod templates. physica status solidi (b), 252(5), 1079-1083.
- Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates. Applied Physics Letters, 105(26), 261103-261103. View this article in WRRO
- Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting. Applied Physics Letters, 105(22), 223902-223902.
- Room temperature continuous–wave green lasing from an InGaN microdisk on silicon. Scientific Reports, 4. View this article in WRRO
- Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films. Applied Physics Letters, 105(17), 171111-171111.
- Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si. Applied Physics Letters, 104(22), 221106-221106.
- Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells. Applied Physics Letters, 104(16).
- Efficiency enhancement of InGaN/GaN solar cells with nanostructures. Applied Physics Letters, 104(5), 051129-051129.
- Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation. Applied Physics Letters, 103(13), 133904-133904.
- Probing light emission from quantum wells within a single nanorod. Nanotechnology, 24(36).
- Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures. Applied Physics Letters, 103(10).
- Improved Crystal Quality of (112̄2) Semi-Polar GaN Grown on A Nanorod Template. Japanese Journal of Applied Physics, 52(8S), 08JC03-08JC03.
- Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.. Nano Lett, 13(7), 3042-3047.
- Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique. Applied Physics Letters, 102(19).
- Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure. Applied Physics Letters, 102(17), 173905-173905.
- Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. Applied Physics Letters, 102(10), 101906-101906.
- Lattice resolved annular dark-field scannning transmission electron microscopy of (Al,Ga)GaN/GaN layers for measuring segregation with sub-monolayer precision. Journal of Materials Science, 48, 2883-2892.
- Characterization of InGaN-based nanorod light emitting diodes with different indium compositions. Journal of Applied Physics, 111(11), 113103-113103.
- Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures. APPLIED PHYSICS LETTERS, 100(18).
- Greatly improved crystal quality of non-polar GaN grown on a-plane GaN nano-rod template obtained using self-organised nano-masks. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 564-567.
- Investigation of the optical properties of InGaN/GaN nanorods with different indium composition. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 620-623.
- A gallium nitride distributed bragg reflector cavity for integrated photonics applications. Optics InfoBase Conference Papers.
- A gallium nitride distributed bragg reflector cavity for integrated photonics applications. CLEO: Science and Innovations, CLEO_SI 2012.
- A gallium nitride distributed bragg reflector cavity for integrated photonics applications. CLEO: Applications and Technology, CLEO_AT 2012.
- Gallium Nitride distributed Bragg Reflector cavity for integrated photonics applications. 2012 Conference on Lasers and Electro-Optics, CLEO 2012.
- Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM. Physica Status Solidi. C: Current Topics in Solid State Physics, 9(3-4), 546-549.
- A gallium nitride Distributed Bragg Reflector cavity for integrated photonics applications. International Conference on Transparent Optical Networks.
- Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 209(3), 477-480.
- Light Emitting and Laser Diodes in the Ultraviolet. IEEE J SEL TOP QUANT, 17(5), 1402-1411.
- Enhanced internal quantum efficiency of an ingan/gan quantum well as a function of silver thickness due to surface plasmon coupling. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2176-2178.
- High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures. APPL PHYS LETT, 98(14).
- Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures. Applied Physics Letters, 99(17).
- InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks. Applied Physics Letters, 99(18).
- Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods. Journal of Physics D: Applied Physics, 44(39).
- Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2056-2058.
- Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe. J APPL PHYS, 108(1).
- Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures. APPL PHYS LETT, 96(25).
- Optically pumped ultraviolet lasing from nitride nanopillars at room temperature. APPL PHYS LETT, 96(24).
- Electron microscopy of AlGaN-based multilayers for UV laser devices. Journal of Physics: Conference Series, 241.
- Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire. APPL PHYS LETT, 95(16).
- Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, 95(11), 111903-111903.
- Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots. Applied Physics Letters, 95(10), 101909-101909.
- Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes. Semiconductor Science and Technology, 24(7), 075020-075020.
- The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al
0.245
Ga
0.755
N/GaN heterostructure and Ni/Au Schottky contact. Chinese Physics B, 18(4), 1614-1617.
- Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts. Chinese Physics B, 18(4), 1618-1621.
- Optical and microstructural study of a single layer of InGaN quantum dots. Journal of Applied Physics, 105(5), 053505-053505.
- MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2).
- Optical spectroscopy of InGaN-GaN quantum dot ensembles. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2).
- Non-polar AlN and GaN/AlN on r-plane sapphire. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2).
- Excitonic spin lifetimes in InGaN quantum wells and epilayers. Journal of Applied Physics, 104(5), 053523-053523.
- Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes. Applied Physics Letters, 93(8), 081915-081915.
- Generation of misfit dislocations in highly mismatched GaN/AlN layers. Surface Science, 602(15), 2643-2646.
- Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer. Journal of Applied Physics, 103(12), 123522-123522.
- The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. Journal of Physics D: Applied Physics, 41(9), 094003-094003.
- Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer. Journal of Physics D: Applied Physics, 41(9), 094004-094004.
- Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films. Microscopy and Microanalysis, 14(SUPPL. 2), 1194-1195.
- Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range. Semiconductor Science and Technology, 22(11), 1240-1244.
- Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer. Applied Physics Letters, 91(13), 131903-131903.
- Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004). APPL PHYS LETT, 91(9).
- The influence of a capping layer on optical properties of self-assembled InGaN quantum dots. Journal of Applied Physics, 101(11), 113520-113520.
- GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. Journal of Applied Physics, 101(9), 093110-093110.
- Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 90(13), 132105-132105.
- Optical investigation of exciton localization in AlxGa1-xN. J APPL PHYS, 101(5).
- Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness. APPL PHYS LETT, 89(25).
- Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer. Applied Physics Letters, 89(13), 131925-131925.
- Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. Applied Physics Letters, 89(8), 081126-081126.
- Origin of the red luminescence in Mg-doped GaN. Applied Physics Letters, 89(2), 022107-022107.
- Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing. PHYS REV B, 73(16).
- Effects of depletion on the emission from individual InGaN dots. Applied Physics Letters, 88(12), 122115-122115.
- V-shaped pits formed at the GaN/AlN interface. Journal of Crystal Growth, 289(1), 63-67.
- Optical properties of AlGaN∕GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate. Journal of Applied Physics, 99(2), 023513-023513.
- The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes. Journal of Applied Physics, 99(2), 024507-024507.
- The role of vacancies in the red luminescence from Mg-doped GaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1919-1922.
- The magnesium acceptor states in GaN: An investigation by optically-detected magnetic resonance. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1892-1896.
- Picosecond carrier dynamics in AllnGaN multiple quantum wells. APPL PHYS LETT, 87(23).
- Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer. Applied Physics Letters, 87(15), 151906-151906.
- A study of dislocations in AlN and GaN films grown on sapphire substrates. Journal of Crystal Growth, 282(3-4), 290-296.
- Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes. Journal of Applied Physics, 97(8), 083104-083104.
- Fabrication and optical investigation of a high-density GaN nanowire array. APPL PHYS LETT, 86(10).
- Study of stimulated emission from InGaN/GaN multiple quantum well structures. Journal of Crystal Growth, 273(1-2), 48-53.
- Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes. Journal of Crystal Growth, 268(1-2), 30-34.
- High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm. Applied Physics Letters, 85(1), 43-45.
- Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors. Journal of Crystal Growth, 267(3-4), 583-587.
- Optical investigation of InGaN/GaN multiple-quantum wells under high excitation. APPL PHYS LETT, 84(25), 5159-5161.
- Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells. APPL PHYS LETT, 84(16), 3052-3054.
- Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003). APPL PHYS LETT, 84(9), 1612-1612.
- Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well. Solid State Communications, 129(1), 31-35.
- Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells. APPL PHYS LETT, 83(10), 1965-1967.
- AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers. Japanese Journal of Applied Physics, 42(Part 1, No. 4A), 1588-1589.
- Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy. Journal of Crystal Growth, 247(1-2), 28-34.
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures. Japanese Journal of Applied Physics, 41(Part 1, No. 10), 5909-5911.
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer. Japanese Journal of Applied Physics, 41(Part 2, No. 10A), L1037-L1039.
- Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer. Japanese Journal of Applied Physics, Part 2: Letters, 41(10 A).
- 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Applied Physics Letters, 81(14), 2508-2510.
- High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 41(7A), 4450-4453.
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer. Japanese Journal of Applied Physics, 41(Part 1, No. 7A), 4450-4453.
- V-shaped defects in AlGaN/GaN superlattices grown in thin undoped-GaN layers on sapphire substrate. Japanese Journal of Applied Physics, Part 2: Letters, 41(6 B).
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate. Japanese Journal of Applied Physics, 41(Part 2, No. 6B), L732-L735.
- Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes. Journal of Crystal Growth, 235(1-4), 177-182.
- Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells. Journal of Physics: Condensed Matter, 14(13), 3445-3455.
- Annealing effect of oxygen on p-GaN epilayers grown by MOCVD. Journal of the Korean Physical Society, 39(SUPPL. Part 1).
- Influence of inversion domains on formation of V-shaped pits in GaN films. Japanese Journal of Applied Physics, Part 2: Letters, 40(11 B).
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films. Japanese Journal of Applied Physics, 40(Part 2, No. 11B), L1254-L1256.
- (0001) oriented GaN epilayer grown on sapphire by MOCVD. Journal of Crystal Growth, 231(1-2), 41-47.
- Study of the strain relaxation in InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 90(4), 1740-1744.
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (11bar20) Sapphire Substrate. Japanese Journal of Applied Physics, 40(Part 1, No. 7), 4445-4449.
- Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures. Applied Physics Letters, 78(19), 2893-2895.
- Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology, 16(5), 402-405.
- Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes. Applied Physics Letters, 78(18), 2617-2619.
- Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates. Journal of Crystal Growth, 224(1-2), 5-10.
- Phase diagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure. Journal of Physics: Condensed Matter, 13(8), L175-L181.
- A study of dislocations in InGaN/GaN multiple-quantum-well structure grown on () sapphire substrate. Journal of Crystal Growth, 223(1-2), 61-68.
- Energy Relaxation by Warm Two-Dimensional Electrons in a GaN/AlGaN Heterostructure. physica status solidi (b), 228(2), 607-611.
- Phonon and Photon Emission from Optically Excited InGaN/GaN Multiple Quantum Wells. physica status solidi (b), 228(1), 107-110.
- Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. Journal of Applied Physics, 88(8), 4729-4729.
- SC-7-9 The characterization of AlGaN/GaN Heterostructures grown by MOCVD on sapphire substrates. Proceedings of the Society Conference of IEICE, 2000(2), 151-152.
- Growth of GaN layer by metal-organic chemical vapor deposition system with a novel three-flow reactor. Journal of Crystal Growth, 218(2-4), 148-154.
- Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition. Solid-State Electronics, 44(9), 1669-1677.
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 39(Part 1, No. 8), 4749-4750.
- Photoluminescence studies of InGaN/GaN multi-quantum wells. Semiconductor Science and Technology, 15(6), 497-505.
- Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time. Applied Physics Letters, 76(19), 2737-2739.
- A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate. Journal of Crystal Growth, 213(1-2), 188-192.
- Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition. Applied Physics Letters, 76(16), 2220-2222.
- Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures. Applied Physics Letters, 76(13), 1737-1739.
- Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process. Journal of Applied Physics, 87(3), 1374-1378.
- X-ray studies of group III-nitride quantum wells with high quality interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 18(4), 2300-2300.
- Cathodoluminescence Characterization of Dislocation Property in Nitride Semiconductors. Electron-microscopy, 34, 225-228.
- MOCVD Growth and Transport Investigation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures on Sapphire Substrates. physica status solidi (b), 216(1), 743-748.
- V-shaped defects in InGaN/GaN multiquantum wells. Materials Letters, 41(2), 67-71.
- Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition. Journal of Crystal Growth, 206(3), 241-244.
- Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots. Applied Physics Letters, 75(7), 950-952.
- Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor. Journal of Applied Physics, 86(4), 2001-2007.
- Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate. Applied Physics Letters, 74(23), 3531-3533.
- Investigation of two-dimensional electron gas in AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Journal of Crystal Growth, 203(3), 443-446.
- Optical investigation of InGaN/GaN multiple quantum wells. Applied Physics Letters, 74(21), 3128-3130.
- Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD. Journal of Crystal Growth, 200(1-2), 85-89.
- The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode. Applied Physics Letters, 74(10), 1376-1378.
- Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy. Journal of Applied Physics, 85(5), 2591-2594.
- Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth. Journal of Crystal Growth, 197(1-2), 48-53.
- Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells. Applied Physics Letters, 73(24), 3571-3573.
- Role of Dislocation in InGaN Phase Separation. Japanese Journal of Applied Physics, 37(Part 2, No. 10B), L1195-L1198.
- Role of dislocation in InGaN phase Separation. Japanese Journal of Applied Physics, Part 2: Letters, 37(10 SUPPL. B).
- The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure. Technical report of IEICE. LQE, 98(109), 67-72.
- Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor. Applied Physics Letters, 73(13), 1847-1849.
- A study on growth and crystallization behavior of nanostructured amorphous silicon nitride. Nanostructured Materials, 4(2), 207-213.
- The Study of Dangling Bond In Nanostructured Amorphous Silicon Nitride By ESR. Journal of Applied Physics, 74(10), 6313-6316.
- Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride. Chin. Phys. Lett., 10(11), 676-679.
- A study of defects in nanostructured amorphous silicon nitride. Physica Status Solidi (a), 139(2), 303-307.
- Gap States in Nanometer-sized Amorphous Silicon Nitride Solids. Journal of Applied Physics, 73(10), 5185-5188.
- Structure and Bond Properties of Compacted and Heat-Treated Silicon Nitride Particles. Physica Status Solidi (a), 136(2), 291-300.
- Long-Wavelength Semipolar (11–22) InGaN/GaN LEDs with Multi-Gb/s Data Transmission Rates for VLC. ACS Applied Electronic Materials.
- Optically-detected magnetic resonance of spin-paired complexes emitting in the2.3eVspectral region in Mg-doped GaN. Physical Review B, 74(23).
- Nature of acceptor states in magnesium-doped gallium nitride. Physical Review B, 71(19).
- Modulation-doping influence on the photoluminescence from the two-dimensional electron gas ofAlxGa1−xN/GaNheterostructures. Physical Review B, 63(20).
- Magneto-optical study of excitonic states inIn0.045Ga0.955As/GaAsmultiple coupled quantum wells. Physical Review B, 62(11), 7433-7439.
- Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupledIn0.045Ga0.955As/GaAsdouble quantum wells. Physical Review B, 58(16), R10183-R10186.
- Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well. Physical Review B, 58(7), 3594-3596.
Chapters
- MOCVD growth of nitride DBRs for optoelectronics, Handbook of Optical Microcavities (pp. 157-210).
- OPTICAL INVESTIGATION OF InGaN/GaN QUANTUM WELL STRUCTURES GROWN BY MOCVD, III-Nitride Semiconductor Materials (pp. 305-343). PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO.
- Optical investigation of InGaN related quantum well structures In Feng ZC (Ed.), III-Nitride Semiconductor Materials (pp. 305-343).
- Handbook of Solid-State Lighting and LEDs CRC Press
- Nitride Emitters– Recent Progress, Wide Bandgap Light Emitting Materials and Devices (pp. 109-144). Wiley-VCH Verlag GmbH & Co. KGaA
Conference proceedings papers
- Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope. IOP Conference Series: Materials Science and Engineering, Vol. 891. Trondheim, Norway, 19 May 2019 - 23 May 2019. View this article in WRRO
- Electrically Injected Hybrid III-Nitride/Organic White LEDs with Nonradiative Energy. CLEO Pacific Rim Conference, 2018.
- Electrically injected hybrid III-nitride/organic white LEDs with non-radiative energy. Optics InfoBase Conference Papers, Vol. Part F113-CLEOPR 2018
- GaN Distributed Bragg Reflector Cavity for Sensing Applications. Frontiers in Optics / Laser Science, 2018.
- Semi-polar InGaN/GaN based long emission wavelength emitter for lighting and displays. 2016 IEEE Photonics Conference (IPC), 2 October 2016 - 6 October 2016.
- Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing. 2016 IEEE Photonics Conference (IPC), 2 October 2016 - 6 October 2016.
- (Invited) High Efficiency Green-Yellow Emission from InGaN/GaN Quantum Well Structures Grown on Overgrown Semi-Polar (11-22) GaN on Regularly Arrayed Micro-Rod Templates. ECS Transactions, Vol. 66(1) (pp 151-155)
- Nanoporous GaN for enhanced solar hydrogen production. Solar Hydrogen and Nanotechnology IX
- Development of high quality and low defect density semipolar and non-polar GaN templates. 2013 10th China International Forum on Solid State Lighting (ChinaSSL), 10 November 2013 - 12 November 2013.
- High-Resolution Cathodoluminescence Hyperspectral Imaging of Nitride Nanostructures. Microscopy and Microanalysis, Vol. 18(6) (pp 1212-1219)
- Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM. Journal of Physics: Conference Series, Vol. 371 (pp 012014)
- The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247(7) (pp 1761-1763)
- Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. Journal of Crystal Growth, Vol. 311(10) (pp 2857-2859)
- Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination. Journal of Electronic Materials, Vol. 36(4) (pp 397-402)
- Improved AlN buffer layer technologies for UV-LEDs. physica status solidi (c), Vol. 4(1) (pp 120-124)
- Fast spin relaxation in InGaN/GaN multiple quantum wells. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 243(7) (pp 1643-1646)
- Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, Vol. 3(6) (pp 1958-1961)
- Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. Microelectronics Journal, Vol. 36(3-6) (pp 223-226)
- AlGaN-based Bragg mirrors and hybrid microcavities for the ultra-violet spectral region. physica status solidi (c), Vol. 2(2) (pp 813-816)
- The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. Physics and Simulation of Optoelectronic Devices XIII
- Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures. Thin Solid Films, Vol. 450(1) (pp 71-74)
- Segregation in compound semiconductors: the Stranski-Krastanow epitaxial transition and electron beam damage processes. 13th European Microscopy Congress (EMC 2004), Vol. 2 (Materials Sciences) (pp 417-418). Herentals, 22 August 2004 - 27 August 2004.
- Space charge effects, carrier capture transient behaviour and α particle detection in semi-insulating GaN. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 514(1-3) (pp 141-145)
- Carrier capture times in InGaN/GaN multiple quantum wells. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 240(2) (pp 364-367)
- Semi-insulating GaN and its evaluation for α particle detection. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 509(1-3) (pp 60-64)
- Photoluminescence of single InGaN quantum dots grown at low surface densities by MOVPE. physica status solidi (c), Vol. 0(7) (pp 2721-2724)
- Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxy. physica status solidi (c), Vol. 0(7) (pp 2478-2481)
- MOCVD growth and optical investigation of the AlInGaN quaternary system. Physica Status Solidi C: Conferences(7) (pp 2019-2022)
- Crack formation and development in AlGaN/GaN structures. physica status solidi (c), Vol. 0(7) (pp 2055-2058)
- Nano-clustering anomalies in InGaN/GaN multiple quantum well structures. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003(180) (pp 297-300)
- MOCVD growth of wide-bandgap nitride semiconductors. Gallium-Nitride-based Technologies: A Critical Review
- MOCVD Growth of Wide-bandgap Nitride Semiconductors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 83 CR (pp 47-76)
- Influence of Built-in Electric Field on Forbidden Transitions in InxGa1-xAs/GaAs Double Quantum Well by Three-Beam Photoreflectance. Acta Physica Polonica A, Vol. 100(3) (pp 417-424)
- A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE. Journal of Crystal Growth, Vol. 221(1-4) (pp 334-337)
- Photoreflectance spectroscopy of coupled In Ga1−As/GaAs quantum wells. Thin Solid Films, Vol. 364(1-2) (pp 220-223)
- Comparison of the optical properties in InGaN/GaN quantum well structures grown on (0001) and (11(2)over-bar0) sapphire substrates. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, Vol. 1 (pp 382-385)
- Indium silicon co-doping in AlGaN/GaN multiple quantum wells. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, Vol. 1 (pp 637-639)
- Laser-induced damage threshold and laser processing of GaN. High-Power Laser Ablation II
- The investigation on the emission mechanism of InGaN/GaN quantum well structure. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, Vol. 1 (pp 524-527)
- Investigation of the Optical Properties in InGaN/GaN Quantum Well Structure. physica status solidi (b), Vol. 216(1) (pp 279-285)
- Investigation of InGaN/GaN Quantum Wells Grown on Sapphire and Bulk GaN Substrates. physica status solidi (b), Vol. 216(1) (pp 273-277)
- Formation and optical properties of selectively grown InGaN/GaN nanostructures. COMPOUND SEMICONDUCTORS 1998(162) (pp 829-832)
- Phase separation mechanism around dislocation in an InGaN/GaN quantum well structure. COMPOUND SEMICONDUCTORS 1998(162) (pp 645-650)
- Optical investigation of the high quality InGaN/GaN MQW by MOCVD with three layer laminar flow gas injection. BLUE LASER AND LIGHT EMITTING DIODES II (pp 357-360)
- Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers (pp 33-36)
- Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer (pp 21-24)
- Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques (pp 423-426)
- Role of Potential Barriers in Epitaxial Layers of Semi-Insulating GaN Layers. Solid State Phenomena, Vol. 93 (pp 301-306)
- Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN. 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.
- Ga2O3/GaN heterostructural ultraviolet photodetectors with exciton-dominated ultranarrow response. ACS Applied Electronic Materials.
- Teaching activities
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- EEE6217
- EEE6216
- Professional activities
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- Director of Centre for GaN Materials and Devices
- Co-director of Joint Research Centre for Wide Bandgap Semiconductor Optoelectronics
- Research students
Student Degree Status Primary/Secondary Ahmed Syed Z PhD Graduated Primary Athanasiou M PhD Graduated Primary Benton J PhD Graduated Primary Ghataora S PhD Graduated Primary Gong Y PhD Graduated Primary Jiu L PhD Graduated Primary Lee K B PhD Graduated Secondary Li Z PhD Graduated Primary Poyiatzis N PhD Graduated Primary Ranalli F PhD Graduated Primary Renwick P PhD Graduated Primary Shen S PhD Graduated Primary Smith R PhD Graduated Primary Tang H PhD Graduated Primary Wang Q PhD Graduated Primary Xing K PhD Graduated Primary Wang X PhD Graduated Secondary Xu B PhD Graduated Primary Yu X PhD Graduated Primary Zhang Y PhD Graduated Primary Zhao X PhD Graduated Primary