Aristotelis Trapalis

Journal articles

• Trapalis A, Fry PW, Kennedy K, Farrer I, Kean A, Sharman J & Heffernan J (2020) Investigation of a novel AlZnN semiconductor alloy. Materials Letters: X, 7. View this article in WRRO
• Trapalis A, Farrer I, Kennedy K, Kean A, Sharman J & Heffernan J (2020) Improved ambient stability of thermally annealed zinc nitride thin films. AIP Advances, 10(3). View this article in WRRO
• Sala EM, Na YI, Godsland M, Trapalis A & Heffernan J (2020) InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy. physica status solidi (RRL) – Rapid Research Letters, 14(8), 2000173-2000173.
• Trapalis A, Farrer I, Kennedy K, Kean A, Sharman J & Heffernan J (2017) Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements. Applied Physics Letters, 111(12). View this article in WRRO
• Trapalis A, Heffernan J, Farrer I, Sharman J & Kean A (2016) Structural, electrical, and optical characterization of as grown and oxidized zinc nitride thin films. Journal of Applied Physics, 120(20). View this article in WRRO
• Trapalis A, Todorova N, Giannakopoulou T, Boukos N, Speliotis T, Dimotikali D & Yu J (2016) TiO2/graphene composite photocatalysts for NOx removal: A comparison of surfactant-stabilized graphene and reduced graphene oxide. Applied Catalysis B: Environmental, 180, 637-647.
• Papailias I, Giannouri M, Trapalis A, Todorova N, Giannakopoulou T, Boukos N & Lekakou C (2015) Decoration of crumpled rGO sheets with Ag nanoparticles by spray pyrolysis. Applied Surface Science, 358, 84-90.
• Sala EM, Godsland M, Trapalis A & Heffernan J () Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in MOVPE. physica status solidi (RRL) – Rapid Research Letters.
• Sala DEM, Godsland M, Na YI, Trapalis A & Heffernan J () Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer. Nanotechnology.

Datasets

• Trapalis A, Farrer I, Kennedy K, Kean A, Sharman J & Heffernan J Data and figures related to publication: Improved ambient stability of thermally annealed Zinc Nitride thin films.
• Trapalis A, Fry P, Kennedy K, Farrer I, Sharman J, Kean A & Heffernan J Data and figures related to publication: Investigation of a novel AlZnN semiconductor alloy.