Dr Jie Bai
Department of Electronic and Electrical Engineering
Research Associate
Centre for GaN Materials and Devices
- Publications
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Journal articles
- Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science. View this article in WRRO
- Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates. Journal of Applied Physics, 127(3), 035705-1-035705-8. View this article in WRRO
- A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs). ACS Photonics, 7(2), 411-415. View this article in WRRO
- Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Scientific Reports, 9(1). View this article in WRRO
- Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Scientific Reports, 9(1). View this article in WRRO
- Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a). View this article in WRRO
- Ultra-energy-efficient photoelectrode using microstriped GaN on Si. ACS Photonics, 6(5), 1302-1306. View this article in WRRO
- Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34(4). View this article in WRRO
- Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates. Scientific Reports, 9. View this article in WRRO
- Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Scientific Reports, 9. View this article in WRRO
- Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Semiconductor Science and Technology, 33(12). View this article in WRRO
- Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials, 11(10). View this article in WRRO
- Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10(5). View this article in WRRO
- Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Journal of Applied Physics, 124(6). View this article in WRRO
- Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 123(17). View this article in WRRO
- Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm. Solar Energy Materials and Solar Cells, 175, 47-51. View this article in WRRO
- Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes. Applied Physics Letters, 111(20), 203901-203901. View this article in WRRO
- Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire. AIP Advances, 7(4), 045009-045009. View this article in WRRO
- Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al
composition. Applied Physics Letters, 110(9). View this article in WRRO
- Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue. Applied Physics Letters, 110(8). View this article in WRRO
- Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates. Applied Physics Letters, 109(24). View this article in WRRO
- GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.. Nanotechnology, 27(45). View this article in WRRO
- Enhanced water splitting with silver decorated GaN photoelectrode. Journal of Physics D: Applied Physics, 49(26), 265601-265601. View this article in WRRO
- Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells. physica status solidi (c), 13(5-6), 297-300.
- Semi‐polar (11‐22) GaN grown on patterned (113) Si substrate. Physica Status Solidi. C: Current Topics in Solid State Physics, 13(5-6), 190-194.
- A single blue nanorod light emitting diode. Nanotechnology, 27(20). View this article in WRRO
- Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template. AIP Advances, 6(2). View this article in WRRO
- Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells. Solar Energy Materials and Solar Cells, 145, 226-230.
- Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells. Applied Physics Letters, 108(3), 031108-031108. View this article in WRRO
- (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates. Applied Physics Letters, 107(26), 261103-261103.
- Enhanced non-radiative energy transfer in hybrid III-nitride structures. Applied Physics Letters, 107(12), 121108-121108.
- Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates. Semiconductor Science and Technology, 30(6), 065012-065012.
- Study of high-quality (11−22) semi-polar GaN grown on nanorod templates. physica status solidi (b), 252(5), 1079-1083.
- Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold.. Sci Rep, 4, 5014. View this article in WRRO
- Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates. Applied Physics Letters, 105(26), 261103-261103. View this article in WRRO
- Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting. Applied Physics Letters, 105(22), 223902-223902.
- Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films. Applied Physics Letters, 105(17), 171111-171111.
- Efficiency enhancement of InGaN/GaN solar cells with nanostructures. APPLIED PHYSICS LETTERS, 104(5).
- Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation. Applied Physics Letters, 103(13).
- Probing light emission from quantum wells within a single nanorod. Nanotechnology, 24(36).
- Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures. Applied Physics Letters, 103(10).
- Improved crystal quality of (11-22) semi-polar GaN grown on a nanorod template. Japanese Journal of Applied Physics, 52(8 PART 2).
- Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.. Nano Lett, 13(7), 3042-3047.
- Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure. Applied Physics Letters, 102(17).
- Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. Applied Physics Letters, 102(10).
- Characterization of InGaN-based nanorod light emitting diodes with different indium compositions. JOURNAL OF APPLIED PHYSICS, 111(11).
- Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures. APPLIED PHYSICS LETTERS, 100(18).
- Investigation of the optical properties of InGaN/GaN nanorods with different indium composition. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 620-623.
- Greatly improved crystal quality of non-polar GaN grown on a-plane GaN nano-rod template obtained using self-organised nano-masks. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 564-567.
- Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 209(3), 477-480.
- Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods. Journal of Physics D: Applied Physics, 44(39).
- InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks. APPLIED PHYSICS LETTERS, 99(18).
- Electron microscopy of AlGaN-based multilayers for UV laser devices. Journal of Physics: Conference Series, 241.
- Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire. APPL PHYS LETT, 95(16).
- Optical and microstructural study of a single layer of InGaN quantum dots. J APPL PHYS, 105(5).
- MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6, S582-S585.
- Non-polar AlN and GaN/AlN on r-plane sapphire. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6, S780-S783.
- Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes. APPL PHYS LETT, 93(8).
- Generation of misfit dislocations in highly mismatched GaN/AlN layers. SURF SCI, 602(15), 2643-2646.
- Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer. J APPL PHYS, 103(12).
- Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer. J PHYS D APPL PHYS, 41(9).
- The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. J PHYS D APPL PHYS, 41(9).
- Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer. APPL PHYS LETT, 91(13).
- The influence of a capping layer on optical properties of self-assembled InGaN quantum dots. J APPL PHYS, 101(11).
- Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer. APPL PHYS LETT, 89(13).
- Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. APPL PHYS LETT, 89(8).
- V-shaped pits formed at the GaN/AlN interface. J CRYST GROWTH, 289(1), 63-67.
- Optical properties of AlGaN/GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate. J APPL PHYS, 99(2).
- Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer. APPL PHYS LETT, 87(15).
- A study of dislocations in AIN and GaN films grown on sapphire substrates. J CRYST GROWTH, 282(3-4), 290-296.
- Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes. J APPL PHYS, 97(8).
- Fabrication and optical investigation of a high-density GaN nanowire array. APPL PHYS LETT, 86(10).
Conference proceedings papers
- Nanoporous GaN for enhanced solar hydrogen production. Solar Hydrogen and Nanotechnology IX
- The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247(7) (pp 1761-1763)
- Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. JOURNAL OF CRYSTAL GROWTH, Vol. 311(10) (pp 2857-2859)
- Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, Vol. 120 (pp 33-36)
- Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, Vol. 120 (pp 21-24)
- Improved AIN buffer layer technologies for UV-LEDs. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 1, Vol. 4(1) (pp 120-124)
- Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science. View this article in WRRO