Dr Peng Luo

Journal articles

• Yan H, DU Y, Luo P, Tan X & Madathil S (2021) Analytical modeling of sheet carrier density and ON-resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices. View this article in WRRO
• Luo P & Madathil S (2020) Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology. IEEE Transactions on Electron Devices. View this article in WRRO
• Luo P & Madathil S (2020) 3-D scaling rules for high voltage planar clustered IGBTs. IEEE Transactions on Electron Devices. View this article in WRRO
• Luo P, Madathil S, Nishizawa S-I & Saito W (2020) Turn-off dV/dt controllability in 1.2kV MOS-bipolar devices. IEEE Transactions on Power Electronics. View this article in WRRO
• Luo P, Madathil S, Nishizawa S-I & Saito W (2020) Evaluation of dynamic avalanche performance in 1.2kV MOS-bipolar devices. IEEE Transactions on Electron Devices. View this article in WRRO
• Luo P, Madathil SN & Long HY (2018) A Novel Approach to Suppress the Collector Induced Barrier Lowering (CIBL) Effect in Narrow Mesa IGBTs. IEEE Electron Device Letters, 39(9), 1350-1353. View this article in WRRO
• Luo P, Long HY, Sweet MR, De Souza M & Madathil SNE (2018) Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65(4), 1440-1446. View this article in WRRO
• Luo P, Sweet M & Ekkanath Madathil S (2017) A snap-back free Shorted Anode Super-Junction TCIGBT. IET Power Electronics. View this article in WRRO
• Madathil S & Luo P () Investigation of Turn-on Performance in 1.2-kV MOS-Bipolar Devices. Japanese Journal of Applied Physics. View this article in WRRO

Conference proceedings papers

• Luo P, Madathil SNE & de Souza P (2021) Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology. 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), 24 May 2021 - 27 May 2021.
• Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) Dynamic avalanche free super junction-TCIGBT for high power density operation. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vienne, Austria, 13 September 2020 - 18 September 2020. View this article in WRRO
• Luo P, Madathil S, Nishizawa S-I & Wataru S (2020) High dV/dt controllability of 1.2kV Si-TCIGBT for high flexibility design with ultra-low loss operation. Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 686-689). New Orleans, LA, USA, 15 March 2020 - 19 March 2020. View this article in WRRO
• Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation. Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA, 9 December 2019 - 11 December 2019. View this article in WRRO
• Luo P, Ekkanath Madathil SN, Nishizawa SI & Saito W (2020) High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings (pp 176-180)
• Luo P, Long HY, Sweet MR, De Souza MM & Narayanan EMS (2017) Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch. 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19 June 2017 - 21 June 2017. View this article in WRRO