Dr Simon Dimler
Department of Electronic and Electrical Engineering
Research Associate in Photodiodes
Semiconductor Materials and Devices Research Group
- Publications
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Journal articles
- Corrections to “Modeling Temperature Dependent Avalanche Characteristics of InP”. Journal of Lightwave Technology, 38(15), 4183-4183.
- Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology. View this article in WRRO
- An excess noise measurement system for weak responsivity avalanche photodiodes. Measurement Science and Technology, 29(6), 065015-065015. View this article in WRRO
- Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++. Journal of Open Research Software, 6(1). View this article in WRRO
- Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.. Optics Express, 26(3), 3568-3576. View this article in WRRO
- Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
- Thin Al1−x GaxAs 0.56Sb 0.44 Diodes With Low Excess Noise. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
- 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
- Cryogenic converter for superconducting coil control. IET Power Electronics, 5(6), 739-746.
- A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571. View this article in WRRO
- Capacitive quenching measurement circuit for Geiger-mode avalanche photodiodes. IEEE J SEL TOP QUANT, 13(4), 919-925.
Software / Code
- Simple Monte Carlo Simulator v1.0.0.
- Software for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
Datasets
- Corrections to “Modeling Temperature Dependent Avalanche Characteristics of InP”. Journal of Lightwave Technology, 38(15), 4183-4183.