Paper of the Month
This paper, published in IEEE Trans. on Industrial Electronics, describes a novel fault detection technique based on high frequency ripple current due to pulse width modulation.
Researchers in the Department of Electronic and Electrical Engineering at Sheffield working with colleagues at University College London (UCL) and Cardiff University have applied advanced electron microscopy to understand the first practical electrically driven 1300-nm wavelength quantum dot laser grown directly grown on a silicon (Si) substrate.
In this paper, we demonstrate semipolar InGaN LEDs with excellent performance in a wide spectral region from green to amber, grown on our overgrown semipolar (11-22) GaN.
The concept of a secure electromagnetic building (SEB) which can successfully prohibit wireless communications is presented.