Journal Papers – 2011

High Repetition Rate Ti:Sapphire Laser Mode-Locked by InP Quantum-Dot Saturable Absorber
M. Butkus, G. Robertson, G. Maker, G. Malcolm, C. Hamilton, A. B. Krysa, B. J. Stevens, R. A. Hogg, Y. Qiu, T. Walther, and E. U. Rafailov
IEEE Photonics Technology Letters, vol. 23, pp. 1603-1605, Nov 1 2011

Simulations of nanograting-assisted light coupling in GaN planar waveguide
R. Dylewicz, R. A. Hogg, R. Airey, R. Paszkiewicz, P. Bienstman, and S. Patela
Optical and Quantum Electronics, vol. 42, pp. 619-629, Sep 2011

Evaluation of a swept-laser optical coherence tomography light source based on a novel quantum-dot based semiconductor optical amplifier
N. Krstajic, D. Childs, N. Peyvast, D. Kasaragod, S. J. Matcher, I. Krestnikov, and R. Hogg
Optical Coherence Tomography and Coherence Techniques V. vol. 8091, R. A. B. B. E. Leitgeb, Ed., 2011

Common path Michelson interferometer based on multiple reflections within the sample arm: sensor applications and imaging artefacts
N. Krstajic, D. Childs, R. Smallwood, R. Hogg, and S. J. Matcher
Measurement Science & Technology, vol. 22, Feb 2011

Swept-Source Laser Based on Quantum-Dot Semiconductor Optical Amplifier-Applications in Optical Coherence Tomography
N. Krstajic, D. T. D. Childs, S. J. Matcher, D. Livshits, A. Shkolnik, I. Krestnikov, and R. A. Hogg
IEEE Photonics Technology Letters, vol. 23, pp. 739-741, Jun 1 2011

Common path Fourier domain optical coherence tomography based on multiple reflections within the sample arm
N. Krstajic, R. Hogg, and S. J. Matcher
Optics Communications, vol. 284, pp. 3168-3172, Jun 1 2011

Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
H. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds
Nature Photonics, vol. 5, pp. 416-419, Jul 2011

Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm
M. A. Majid, S. C. Chen, D. T. D. Childs, H. Shahid, R. J. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray
Novel in-Plane Semiconductor Lasers X. vol. 7953, A. A. S. P. M. Belyanin, Ed., 2011

Strain engineered bilayers for extending the operating wavelength of quantum dot lasers
M. A. Majid, D. T. D. Childs, R. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray
IET Optoelectronics, vol. 5, pp. 100-104, Jun 2011

O-band excited state quantum dot bilayer lasers
M. A. Majid, D. T. D. Childs, K. Kennedy, R. Airey, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray
Applied Physics Letters, vol. 99, Aug 1 2011

1.52 μm electroluminescence from GaAs-based quantum dot bilayers
M. A. Majid, D. T. D. Childs, H. Shahid, R. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray
Electronics Letters, vol. 47, pp. 44-45, Jan 6 2011

Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
M. A. Majid, D. T. D. Childs, H. Shahid, S. Chen, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Howe, P. D. Spencer, and R. Murray
IEEE Journal of Selected Topics in Quantum Electronics, vol. 17, pp. 1334-1342, Sep-Oct 2011

Excited State Bilayer Quantum Dot Lasers at 1.3 μm
M. A. Majid, D. T. D. Childs, H. Shahid, S. C. Chen, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray
Japanese Journal of Applied Physics, vol. 50, Apr 2011

Design Rules and Characterisation of Electrically Pumped Vertical External Cavity Surface Emitting Lasers
J. R. Orchard, D. T. D. Childs, L. C. Lin, B. J. Stevens, D. M. Williams, and R. A. Hogg
Japanese Journal of Applied Physics, vol. 50, Apr 2011

Tradeoffs in the Realization of Electrically Pumped Vertical External Cavity Surface Emitting Lasers
J. R. Orchard, D. T. D. Childs, L. C. Lin, B. J. Stevens, D. M. Williams, and R. A. Hogg
IEEE Journal of Selected Topics in Quantum Electronics, vol. 17, pp. 1745-1752, Nov-Dec 2011

Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source
N. Ozaki, K. Takeuchi, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, and R. A. Hogg
Journal of Crystal Growth, vol. 323, pp. 191-193, May 15 2011

Comparison of gain measurement techniques for 1.3 μm quantum dot lasers
H. Shahid, D. T. D. Childs, B. J. Stevens, and R. A. Hogg
Novel in-Plane Semiconductor Lasers X. vol. 7953, A. A. S. P. M. Belyanin, Ed., 2011

Negative differential gain due to many body effects in self-assembled quantum dot lasers
H. Shahid, D. T. D. Childs, B. J. Stevens, and R. A. Hogg
Applied Physics Letters, vol. 99, Aug 8 2011

Subthreshold diode characteristics of InAs/GaAs quantum dot lasers
P. Spencer, E. Clarke, R. Murray, K. M. Groom, R. R. Alexander, and R. A. Hogg
Physical Review B, vol. 83, May 17 2011

Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide
Atkins, C. N., Krysa, A. B., Revin, D. G., Kennedy, K., Commin, J. P., & Cockburn, J. W.
Electronics Letters, 47. doi:10.1049/el.2011.2917

InP-Based Midinfrared Quantum Cascade Lasers for Wavelengths Below 4 μm
Revin, D. G., Commin, J. P., Zhang, S. Y. Y., Krysa, A. B., Kennedy, K., & Cockburn, J. W.
IEEE Journal of Selected Topics in Quantum Electronics, 17(5), 1417-1425. doi:10.1109/JSTQE.2011.2128858

Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
Majid, M. A., Childs, D. T. D., Shahid, H., Chen, S. M., Kennedy, K., Airey, R. J., Murray, R.
IEEE Journal of Selected Topics in Quantum Electronics, 17(5), 1334-1342. doi:10.1109/JSTQE.2011.2108270

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal-Organic Vapor Phase Epitaxy
Krysa, A. B., Revin, D. G., Commin, J. P., Atkins, C. N., Kennedy, K., Qiu, Y., Cockburn, J. W.
IEEE Photonics Technology Letters, 23(12), 774-776. doi:10.1109/LPT.2011.2138124

High temperature λ∼ 4 μm In0.7Ga0.3As/In0.34Al0.66As quantum cascade lasers grown by MOVPE
Revin, D. G., Kennedy, K., Commin, J. P., Qiu, Y., Walther, T., Cockburn, J. W., Krysa, A. B.
Electronics Letters, 47(9), 559-561. doi:10.1049/el.2011.0656

Excited State Bilayer Quantum Dot Lasers at 1.3 μm
Majid, M. A., Childs, D. T. D., Shahid, H., Chen, S. C., Kennedy, K., Airey, R. J., Murray, R.
Japan Journal of Applied Physics, 50(4), . doi:10.1143/JJAP.50.04DG10

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes
O. D. D. Couto Jr., J. Puebla, E. A. Chekhovich, I. J. Luxmoore, C. J. Elliott, N. Babazadeh, M. S.Skolnick, A. I. Tartakovskiiy and A. B. Krysa
10.1103/PhysRevB.84.125301, 07/2011

The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes
A.M. Barnett, J.E. Lees, D.J. Bassford, J.S. Ng, C.H. Tan, N. Babazadeh, R.B. Gomes
Nuclear Instruments and Methods in Physics Research A, Volume 654, Issue 1, p. 336-339., 2011

Development of high temperature AlGaAs soft X-ray photon counting detectors
J.E. Lees,a, A.M. Barnett, D.J. Bassford, J.S. Ng, C.H. Tan, N. Babazadeh, R.B. Gomes, P. Vines, J.P.R. David, R.D. McKeag and D. Boe
Journal of Instrumentation 6, C12007 (2011)

High Repetition Rate Ti:Sapphire Laser Mode-Locked by InP Quantum-Dot Saturable Absorber
Butkus, M., Robertson, G., Maker, G., Malcolm, G., Hamilton, C., Krysa, A. B., Rafailov, E. U.
IEEE Photonics Technology Letters, 23(21), 1603-1605. doi:10.1109/LPT.2011.2164902 

Dark current mechanism in bulk GaInNAs lattice matched to GaAs
L.J.J. Tan, W.M. Soong, J.P.R. David, J.S. Ng
IEEE Transactions on Electron Devices 58 103-106, 2011

InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 µm
D.S.G. Ong, J.S. Ng, YL Goh, C.H. Tan, S.Y. Zhang, J.P.R. David
IEEE Transactions on Electron Devices 58 486-489, 2011

Sensitivity of high-speed lightwave system receivers using InAlAs avalanche photodiodes
D.S.G. Ong, M.M. Hayat, J.P.R. David, J.S. Ng
IEEE Photonics Technology Letters 23 233-235, 2011

Photoluminescence investigation of high quality GaAs1-xBix on GaAs
A.R. Mohmad, F. Bastiman, J.S. Ng, S.J. Sweeney, J.P.R. David
Applied Physics Letters 98 122107, 2011

Noise, gain, and responsivity in low-strain quantum dot infrared photodetectors with up to 80 dot-in-a-well periods
P. Vines, C.H. Tan, J.P.R. David, R.S. Attaluri, T.E Vandervelde, S. Krishna
IEEE Journal of Quantum Electronics 47 607-613, 2011

Dark current mechanisms in quantum dot laser structures
N.F. Hasbullah, J.P.R. David, D.J Mowbray
Journal of Applied Physics 109 113111, 2011

Avalanche gain and energy resolution of semiconductor X-ray detectors
C.H. Tan, R.B. Gomes, J.P.R. David, A.M. Barnett, D.J. Bassford, J.E. Lees, J.S. Ng
IEEE Transactions on Electron Devices 58 1696-1701, 2011

Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
A.R.J. Marshall, P. Vines, P.J. Ker, J.P.R. David, C.H. Tan
IEEE Journal of Quantum Electronics 47 858-864, 2011

GaInNAsSb/GaAs photodiodes for long-wavelength applications
S.L Tan, S.Y. Zhang, W.M. Soong, Y.L. Goh, L.J.J. Tan, J.S. Ng, J.P.R. David, I.P. Marko, A.R. Adams, S.J. Sweeney, J. Allam
IEEE Electron Device Letters 32 919-921, 2011

The effect of Bi composition to the optical quality of GaAs1-xBix
A.R. Mohmad, F. Bastiman, C.J. Hunter, J.S. Ng, S.J. Sweeney, J.P.R. David
Applied Physics Letters 99 042107, 2011

Temperature dependence of leakage current in InAs avalanche photodiodes
P.J. Ker, A.R.J. Marshall, A.B. Krysa, J.P.R. David, C.H. Tan
IEEE Journal of Quantum Electronics 47 1123-1128, 2011

Impact ionization coefficients in Al0.52In0.48P
J.S.L. Ong, J.S. Ng, A.B. Krysa, J.P.R. David
IEEE Electron Device Letters 32 1528-1530, 2011

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
A.R.J. Marshall, P.J. Ker, A.B. Krysa, J.P.R. David, C.H. Tan
Optics Express 19 23341-23349, 2011

Development of high temperature AlGaAs soft X-ray photon counting detectors
J.E. Lees, A.M. Barnett, D.J. Bassford, J.S. Ng, C.H. Tan, N. Babazadeh, R.B. Gomes, P. Vines, J.P.R. David, R.D. McKeag, D. Boe
Journal of Instrumentation 6 C12007, 2011

InAs avalanche photodiodes for X-ray detection
R.B. Gomes, C.H. Tan, P.J. Ker, J.P.R. David, J.S. Ng
Journal of Instrumentation 6 P12005, 2011

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 µm operation
F.A.I. Chaqmaqchee, S. Mazzucato, M. Oduncuoglu, N. Balkan, Y. Sun, M. Gunes, M. Hugues, M. Hopkinson
Nanoscale Research Letters 6, 2011

In situ control and monitoring of photonic device intermixing during laser irradiation
C.K. Chia, M. Suryana, M. Hopkinson
Optics Express 19(10) 9535-9540, 2011

Observation of phase shifts in a vertical cavity quantum dot switch
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson
Applied Physics Letters 98(23), 2011

Thermal quenching of single localized excitons in GaInNAs layers
M. Latkowska, R. Kudrawiec, G. Sek, J. Misiewicz, J. Ibanez, M. Henini, M. Hopkinson
Applied Physics Letters 98(13), 2011

Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells
T. Nuytten, M. Hayne, B. Bansal, H.Y. Liu, M. Hopkinson, V.V. Moshchalkov
Physical Review B 84(4), 2011

Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage
Y. Wu, I.M. Piper, M. Ediger, P. Brereton, E.R. Schmidgall, P.R. Eastham, M. Hugues, M. Hopkinson, R.T. Phillips
Physical Review Letters 106(6), 2011

Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy
M. Shafi, R.H. Mari, A. Khatab, M. Henini, A. Polimeni, M. Capizzi, M. Hopkinson
Journal of Applied Physics 110(12), 2011

Extended ptychography in the transmission electron microscope: Possibilities and limitations
F. Hue, J.M. Rodenburg, A.M. Maiden, P.A. Midgley
Ultramicroscopy 111(8) 1117-1123, 2011

Superresolution imaging via ptychography
A.M. Maiden, M.J. Humphry, F. Zhang, J.M. Rodenburg
JOSA A 28(4) 604-612, 2011

InAs avalanche photodiodes for X-ray detection
R. B. Gomes, C. H. Tan, P. J. Ker, J. P. R. David, J. S. Ng
Journal of Instrumentation, 6, 2011

Development of high temperature AlGaAs soft X-ray photon counting detectors
J. E. Lees, A. M. Barnett, D. J. Bassford, J. S. Ng, C. H. Tan, N. Babazadeh, D. Boe
Journal of Instrumentation, 6(12) 2011

Three-dimensional measurement of composition changes in InAs/GaAs quantum dots
A. Wahra, C.H. Tan, J. Xie, P. Vines, R. Beanland
Journal of Physics: Conference Series, 326(1), 2011

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
A. R. Marshall, P. J. Ker, A. Krysa, J. P.R. David, C. H. Tan
Opt Express, 19(23), 23341-23349, 2011,

High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes
I. C. Sandall, S. Xie, J. Xie, C. H. Tan
Opt Lett, 36(21), 4287-4289, 2011

AlAsSb Avalanche Photodiodes with a Sub-mV/K Temperature Coefficient of Breakdown Voltage.
S. Y. Xie, C. H. Tan
IEEE J QUANTUM ELECT, 47(11), 1391-1395, 2011

The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes
A. M. Barnett, J. E. Lees, D. J. Bassford, J. S. Ng, C. H. Tan, N. Babazadeh, R. B. Gomes
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 654(1), 336-339, 2011

Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes
P. J. Ker, A. R. J. Marshall, A. B. Krysa, J. P. R. David, C. H. Tan
IEEE J QUANTUM ELECT, 47(8), 1123-1128, 2011

Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors
C. H. Tan, R. B. Gomes, J. P. R. David, A. M. Barnett, D. J. Bassford, J. E. Lees, J. S. Ng
IEEE T ELECTRON DEV, 58(6), 1696-1701, 2011

Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K
A. R. J. Marshall, P. Vines, P. J. Ker, J. P. R. David, C. H. Tan
IEEE J QUANTUM ELECT, 47(6), 858-864, 2011

Implementation of an algorithmic spectrometer using Quantum Dot Infrared Photodetectors
C. H. Tan, P. Vines, M. Hobbs, B. Anderson, M. Hugues, J.P.R. David
Infrared Physics and Technology, 54(3), 228-232, 2011

Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors with up to 80 Dot-in-a-Well Periods
P. Vines, C. H. Tan, J. P. R. David, R. S. Attaluri, T. E. Vandervelde, S. Krishna
IEEE J QUANTUM ELECT, 47(5), 607-613, 2011

Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs.
A. M. Barnett, J. E. Lees, D. J. Bassford, J. S. Ng, C. H. Tan, R. B. Gomes
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 626-627(1), 25-30, 2011

Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As
A. M. Barnett, J. E. Lees, D. J. Bassford, J. S. Ng, C. H. Tan, R. B. Gomes
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 629(1), 154-156, 2011

InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm
D. S. G. Ong, J. S. Ng, Y. L. Goh, C. H. Tan, S. Zhang, J. P. R. David
IEEE Transactions on Electron Devices, 58(2), 486-489, 2011

Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors.
P. Vines, C. H. Tan, J. P. R. David, R. S. Attaluri, T. E. Vandervelde, S. Krishna, M. M. Hayat,
IEEE Journal of Quantum Electronics, 47(2), 190-197, 2011

Wear of hydrogen free C/Cr PVD coating against Al2O3 at room temperature
Z. Zhou, I.M. Ross, L. Ma, W.M. Rainforth, A.P. Ehiasarian, P. Hovsepian
Wear 271(9-10), (2011), 2150-2156

InAs avalanche photodiodes for X-ray detection
R.B. Gomes, C.H. Tan, P.J. Ker, J.P.R. David, J.S. Ng
Journal of Instrumentation 6(12), 2011

The effect of Bi composition to the optical quality of GaAs1-xBix
A.R. Mohmad, F. Bastiman, C.J. Hunter, J.S. Ng, S.J. Sweeney, J.P.R. David
Applied Physics Letters 99 042107, 2011

GaInNAsSb/GaAs photodiodes for long wavelength applications
S.L. Tan, S.Y. Zhang, W.M. Soong, Y.L. Goh, L.J.J. Tan, J.S. Ng, J.P.R. David, I.P. Marko, A.R. Adams, S.J. Sweeney, J. Allam
IEEE Electron Device Letters 32(7) 919-921, 2011

Photoluminescence investigation of high quality GaAs1-xBix on GaAs
A.R. Mohmad, F. Bastiman, J.S. Ng, S.J. Sweeney, J.P.R. David
Applied Physics Letters 98 122107, 2011

Avalanche gain and energy resolution of semiconductor X-ray detectors
C.H. Tan, R.B. Gomes, J.P.R. David, A.M. Barnett, D.J. Bassford, J.E. Lees, J.S. Ng
IEEE Transactions on Electron Devices 58(6) 1696-1701, 2011

Impact ionization coefficients in Al0.52In0.48P
J.S.L. Ong, J.S. Ng, A.B. Krysa, J.P.R. David
IEEE Electron Device Letters 32(11) 1528-1530, 2011

InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm
D.S.G. Ong, J.S. Ng, Y.L. Goh, C.H. Tan, S. Zhang, J.P.R. David
IEEE Transactions on Electron Devices 58(2) 486-489, 2011

Sensitivity of high-speed lightwave system receivers using InAlAs avalanche photodiodes
D.S.G. Ong, M.M. Hayat, J.P.R. David, J.S. Ng
IEEE Photonics Technology Letters 23(4) 233-235, 2011

Development of high temperature AlGaAs soft X-ray photon counting detectors
J.E. Lees, A.M. Barnett, D.J. Bassford, J.S. Ng, C.H. Tan, N. Babazadeh, R.B. Gomes, P. Vines, J.P.R. David, R.M. McKeag, D. Boe
Journal of Instrumentation 6(12), 2011

Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As
A.M. Barnett, J.E. Lees, D.J. Bassford, J.S. Ng, C.H. Tan, R.B. Gomes
Nuclear Instruments and Methods in Physics A 629 154-156, 2011

Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs
A.M. Barnett, D.J. Bassford, J.E. Lees, J.S. Ng, C.H. Tan, R.B. Gomes
Nuclear Instruments and Methods in Physics A 626-627 25-30, 2011

Superresolution imaging via ptychography
A.M. Maiden, M.J. Humphys, F. Zhang, J.M. Rodenburg
Journal of the Optical Society of America, vol 28, pp 604-612, 2011

Evolutionary determination of experimental parameters for ptychographical imaging
A.Shenfield and J.M. Rodenburg
Journal of Applied Physics, vol 109, 124510, 2011

Extended ptychography in the transmission electron microscope: Possibilities and limitations
F. Hü, J.M. Rodenburg, A.M. Maiden and P.A. Midgley
Ultramicroscopy, vol 111, pp 1117-1123, 2011

Coherent x-ray diffraction imaging of paint pigment particles by scanning a phase plate modulator
B. Chen, F.C. Zhang, F. Berenguer, R.J. Bean, C.M. Kewish, J. Vilas-Comamala, Y.S. Chu, J.M. Rodenburg and I.K. Robinson
New Journal of Physics, vol 13, 103022, 2011

High-k gate dielectric MOSFETs: meeting the challenges of characterisation and modelling
M.M. De Souza, S. Sicre and D. Casterman
ECS Transactions, 35(4), 563, 2011

Position paper on carbon nanotubes EU funded nanoICT coordination action
W.I. Milne, S. Hofmann, P. Boggild, J. McLaughlin, J. Robertson, G. Pagona, G.A.D. Briggs, P. Hiralal, M.M. De Souza, K.B.K. Teo, K. Bo Mogensen
Nano Newsletter Special Issue, Vol 20/21, 2011

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires
L. Lari, T. Walther, M. Gass, L. Geelhaar, C. Cheze, H. Riechert, T.J. Bullough and P.R. Chalker
Journal of Crystal Growth, vol 327(1), pp 27-34, 2011

Room temperature GaAs/AlGaAs quantum cascade lasers grown by metal-organic vapour phase epitaxy
A.B. Krysa, D.G. Revin, J.P. Commin, C.N. Atkins, K. Kennedy, Y. Qiu, T. Walther and J.W. Cockburn
IEEE Photonics Technology Letters, vol 23 (12), pp 774-776, 2011

High temperature λ ~4μm In0.7Ga0.3As/In0.34Al0.66As quantum cascade lasers grown by MOVPE
D.G. Revin, K. Kennedy, J.P. Commin, Y. Qiu, T. Walther, J.W. Cockburn and A.B. Krysa
Electronic Letters, vol 47(9), pp 559-561, 2011

Three-Dimensional Holographic Lithography by an Iterative Algorithm
J. J. Cowling, G. L. Williams, A. Purvis, R. McWilliam, J. J. Toriz-Grcia, N. L. Seed. F. B. Soulard, P. A. Ivey
Optics Letters 36(13), pp2495-2497, Optical Society of America, ISSN 0146-9592, 2011

Vertical Tracks on the Sidewall of a Silicon Die using 3D Holographic Photolithography
J. J. Toriz-Garcia, G. L. Williams, R. McWilliam. N. L. Seed, A. Purvis, F. B. Soulard, J. J. Cowling, P. A. Ivey
Journal of Micromechanics and Microengineering, 21(8), 085034, ISSN 0960-1317, 2011

A Survey on Fall Detection: Principles and Approaches
M. Mubashir, L.Shao, N.L. Seed
Published (online) in Neurocomputing, ISSN 0925-2312 (IF 1.44). doi:10.1016/j.neucom.2011.09.037