Journal Papers – 2012

Hybrid Quantum Well/Quantum Dot Structures for Broad Spectral Bandwidth Devices
S. Chen, K. Zhou, Z. Zhang, D. T. D. Childs, J. R. Orchard, R. A. Hogg, K. Kennedy, and M. Hugues
Physics and Simulation of Optoelectronic Devices XX. vol. 8255, B. Witzigmann, et al., Eds., 2012

Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure 
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg
Applied Physics Letters, vol. 100, Jan 23 2012

Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser
S. M. Chen, K. J. Zhou, Z. Y. Zhang, O. Wada, D. T. D. Childs, M. Hugues, X. Jin, and R. A. Hogg
Electronics Letters, vol. 48, pp. 644-645, May 24 2012

Active glass waveguide amplifier on GaAs by UV-pulsed laser deposition and femtosecond laser inscription
M. Irannejad, M. Pasha, G. Jose, P. Steenson, T. T. Fernandez, A. Jha, Q. Jiang, Z. Y. Zhang, R. A. Hogg, C. Evans, Z. Ikonic, and P. Harrison
Laser Physics Letters, vol. 9, pp. 329-339, 2012 2012

Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications
M. A. Majid, M. Hugues, D. T. D. Childs, and R. A. Hogg
Japanese Journal of Applied Physics, vol. 51, Feb 2012

Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices
M. A. Majid, M. Hugues, S. Vezian, D. T. D. Childs, and R. A. Hogg
IEEE Photonics Journal, vol. 4, pp. 2066-2073, Dec 2012

Self-Assembled Quantum Dot Based Swept Laser Source for Optical Coherence Tomography Applications
N. Peyvast, D. T. D. Childs, N. Krstajic, Z. Lu, S. J. Matcher, D. Livshits, A. Shkolnik, I. Krestnikov, and R. A. Hogg
Optical Coherence Tomography and Coherence Domain Optical Methods in Biomedicine XVI. vol. 8213, J. A. Izatt, et al., Eds., 2012

Negative Differential Gain in 1.3μm Quantum Dot Lasers: Comparison of Self Heating and Free Carrier Effects
H. Shahid, D. T. D. Childs, B. J. Stevens, and R. A. Hogg
Physics and Simulation of Optoelectronic Devices XX. vol. 8255, B. Witzigmann, et al., Eds., 2012

The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
T. Wang, A. Lee, F. Tutu, A. Seeds, H. Liu, Q. Jiang, K. Groom, and R. Hogg
Applied Physics Letters, vol. 100, Jan 30 2012

Realization of a photonic crystal surface emitting laser through GaAs based regrowth
D. M. Williams, K. M. Groom, D. T. D. Childs, B. J. Stevens, S. Khamas, T. S. Roberts, R. J. E. Taylor, R. A. Hogg, N. Ikeda, and Y. Sugimoto
Physics and Simulation of Optoelectronic Devices XX. vol. 8255, B. Witzigmann, et al., Eds., 2012

Epitaxially Regrown GaAs-Based Photonic Crystal Surface-Emitting Laser
D. M. Williams, K. M. Groom, B. J. Stevens, D. T. D. Childs, R. J. E. Taylor, S. Khamas, R. A. Hogg, N. Ikeda, and Y. Sugimoto
IEEE Photonics Technology Letters, vol. 24, pp. 966-968, Jun 1 2012

Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser
D. M. Williams, K. M. Groom, B. J. Stevens, D. T. D. Childs, R. J. E. Taylor, S. Khamas, R. A. Hogg, N. Ikeda, and Y. Sugimoto
Japanese Journal of Applied Physics, vol. 51, Feb 2012

1.55 μm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
Z. Y. Zhang, A. E. H. Oehler, B. Resan, S. Kurmulis, K. J. Zhou, Q. Wang, M. Mangold, T. Sueedmeyer, U. Keller, K. J. Weingarten, and R. A. Hogg
Scientific Reports, vol. 2, Jun 28 2012

Effect of Modulation p-doping on the Differential Carrier Lifetime of Quantum Dot Lasers
K. Zhou, S. Chen, D. T. D. Childs, and R. A. Hogg
Novel in-Plane Semiconductor Lasers XI. vol. 8277, A. A. Belyanin and P. M. Smowton, Eds., 2012

Quantum dot selective area intermixing for broadband light sources
K.. Zhou, Q. Jiang, Z. Y. Zhang, S. M. Chen, H. Y. Liu, Z. H. Lu, K. Kennedy, S. J. Matcher, and R. A. Hogg
Optics Express, vol. 20, pp. 26950-26957, Nov 19 2012

Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas
N. Ozaki, K. Takeuchi, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, and R. A. Hogg 
IEICE Transactions on Electronics, vol. E95C, pp. 247-250, Feb 2012

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
F. Bastiman, A.R.B. Mohmad, J.S. Ng, J.P.R. David, S.J. Sweeney
Journal of Crystal Growth 338 57-61, 2012

Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique
K.C. Nunna, S.L. Tan, C.J. Reyner, A.R.J. Marshall, B.L. Liang, A. Jallipalli, J.P.R. David, D.L. Huffaker
IEEE Photonics Technology Letters 24 218-220, 2012

Bi incorporation in GaAs(100)-2 x 1 and 4 x 3 reconstructions investigated by RHEED and STM
F. Bastiman, A.G. Cullis, J.P.R. David, S.J. Sweeney
Journal of Crystal Growth 341 19-23, 2012

Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes
R.B. Gomes, C.H. Tan, J.E. Lees, J.P.R. David, J.S. Ng
IEEE Transactions on Electron Devices 59 1063-1067, 2012

Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
J.E. Green, W.S. Loh, A.R.J. Marshall, B.K. Ng, R.C. Tozer, J.P.R. David, S.I. Soloviev, P.M. Sandvik
IEEE Transactions on Electron Devices 59 1030-1036, 2012

1300 nm wavelength InAs quantum dot photodetector grown on silicon
I. Sandall, J.S. Ng, J.P.R. David, C.H. Tan, T. Wang, H.Y. Liu
Optics Express 20 10446-10452, 2012

Effects of rapid thermal annealing on GaAs1-xBix alloys
A.R Mohmad, F. Bastiman, C.J. Hunter, R. Richards, S.J. Sweeney, J.S. Ng, J.P.R. David
Applied Physics Letters 101 012106, 2012

In-plane interdot carrier transfer in InAs/GaAs quantum dots
J. Bhattacharyya, S. Zybell, S. Winnerl, M. Helm, M. Hopkinson, L.R. Wilson, H. Schneider
Applied Physics Letters 100(15), 2012

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
F.A.I. Chaqmaqchee, S. Mazzucato, M. Oduncuoglu, N. Balkan, Y. Sun, M. Gunes, M. Hugues, M. Hopkinson
Nanoscale Research Letters 6(104), 2012

Structural analysis of strained quantum dots using nuclear magnetic resonance
E.A. Chekhovich, K.V. Kavokin, J. Puebla, A.B. Krysa, M. Hopkinson, A.D. Andreev, A.M. Sanchez, R. Beanland, M.S. Skolnick, A.I. Tartakovskii
Nature Nanotechnology 7(10), 2012

Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 μm operation
F.A.I. Chaqmaqchee, S. Mazzucato, Y. Sun, N. Balkan, E. Tiras, M. Hughes, M. Hopkinson
Materials Science and Engineering B-Advanced Functional Solid-State Materials 177(10) 739-743, 2012

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
R. Gargallo-Caballero, A. Guzman, J.M. Ulloa,A. Hierro, M. Hopkinson, E. Luna, A. Trampert
Journal of Applied Physics 111(8), 2012

Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot
O. Makarovsky, E.E. Vdovin, A. Patane, L. Eaves, M.N. Makhonin, A.I. Tartakovskii, M. Hopkinson
Physical Review Letters 108(11), 2012

Polarization-resolved resonant fluorescence of a single semiconductor quantum dot
J. Robertson, S. Founta, M. Hughes, M. Hopkinson, A.J. Ramsay, M.S. Skolnick, C.K. Shih
Applied Physics Letters 101(25), 2012

InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell
S. Trushkin, A. Kaminska, W. Trzeciakowski, M. Hopkinson, A. Suchocki
Journal of Applied Physics 112(7), 2012

Polariton states bound to defects in GaAs/AlAs planar microcavities
J.M. Zajac, W. Langbein, M. Hugues, M. Hopkinson
Physical Review B 85(16), 2012

Ptychographic transmission microscopy in three dimensions using a multi-slice approach
A.M. Maiden, M.J. Humphry, J.M. Rodenburg
JOSA A 29(8) 1606—1614, 2012

An annealing algorithm to correct positioning errors in ptychography
A.M. Maiden, M.J. Humphry, M.C. Sarahan, B. Kraus, J.M. Rodenburg
Ultramicroscopy 120 64-72, 2012

Quantitative phase contrast optimized cancerous cell differentiation via ptychography
D. Claus, A.M. Maiden, F. Zhang, F.G.R. Sweeney, M.J. Humphry, H. Schluesener, J.M. Rodenburg
Optics Express 20(9) 9911-9918, 2012

Ptychographic electron microscopy using high-angle dark-field scattering for sub-nanometre resolution imaging
M.J. Humphry, B. Kraus, A.C. Hurst, A.M. Maiden, J.M. Rodenburg
Nature Communications 3 730, 2012

Low noise avalanche photodiodes incorporating a 40 nm ALASSB avalanche region
C. H. Tan, S. Xie, J. Xie,
IEEE Journal of Quantum Electronics, 48(1), 36-41, 2012

Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes.
P. J. Ker, J. P. R. David, C. H. Tan
Optics Express, 20(28), 29568-29576, 2012

A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon
X. Zhou, J.S. Ng, C.H. Tan
Journal of Instrumentation, 7(8) 2012

Cryogenic converter for superconducting coil control
A. J. Forsyth, C. Jia, D. Wu, C. H. Tan, S. Dimler, Y. Yang, W. Bailey
IET Power Electronics, 5(6), 739-746, 2012

1300 nm wavelength InAs quantum dot photodetector grown on silicon.
I.C. Sandall, J. S. Ng, J. P. R. David, C. H. Tan, T. Wang, H. Liu
Optics Express, 20(10), 10446-10452, 2012

Excess noise characteristics of thin AlAsSb APDs
J. Xie, S. Xie R. C. Tozer, C. H. Tan
IEEE Transactions on Electron Devices, 59(5), 1475-1479, 2012

Planar InAs photodiodes fabricated using He ion implantation
I.C. Sandall, C. H. Tan, A. Smith, R. Gwilliam
Optics Express, 20(8), 8575-8583, 2012

Modelling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors
B. H. Hong, S. I. Rybchenko, I. E. Itskevich, S. K. Haywood, C. H. Tan, P. Vines, M. Hugues
Journal of Applied Physics, 111

Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes
R. B. Gomes, C. H. Tan, J. E. Lees, J. P. R. David, J. S. Ng
IEEE Transactions on Electron Devices, 59(4), 1063-1067, 2012

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
P. J. Ker, A. R. J. Marshall, J. P. R. David, C. H. Tan
Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 310-313, 2012

Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM
H. Amari, I.M. Ross, T Wang, T. Walther
Physica Status Solidi. C: Current Topics in Solid State Physics 9(3-4), (2012), 546-549

Cationic surface reconstructions on cerium oxide nanocrystals: an aberration-corrected HRTEM study
U.M. Bhatta, I.M. Ross, T.X. Sayle, D.C. Sayle, S.C. Parker, D. Reid, S. Seal, A. Kumar, G. Möbus
ACS Nano 6(1), (2012), 421-430 24

Atom probe tomography characterisation of a laser diode structure grown by molecular beam eoitaxy
S.E. Bennett, T. Smeeton, D.W. Saxey, G.D.W. Smith, S.E. Hooper, J. Heffernan, C. J. Humphreys, R.A. Oliver
Journal Appl. Phys. Vol 111, 5, pp 053508-053508, 2012

Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors
S.L. Tan, C.J. Hunter, S. Zhang, L.J.J. Tan, Y.L. Goh, J.S. Ng, J.P.R. David, I.P. Marko, S.J. Sweeney, A.R. Adams, J. Allam
Journal of Electronic Materials 41(12) 3393, 2012

Determination of the electron-hole pair creation energy in Al0.8Ga0.2As
A.M. Barnett, J.E. Lees, D.J. Bassford, J.S. Ng
Journal of Instrumentation 7 06016, 2012

1300 nm wavelength InAs quantum dot photodetector grown on silicon
I. Sandall, J.S. Ng, J.P.R. David, C.H. Tan, T. Wang, H. Liu
Optics Express 20(10)10446-10452, 2012

Effects of dead space on avalanche gain distribution X-ray avalanche photodiodes
R.B. Gomes, C.H. Tan, J.E. Lees, J.P.R. David, J.S. Ng
IEEE Transactions on Electron Devices 59(4)1063-1067, 2012

A varied shaping time noise analysis of Al0.8Ga0.2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier
A.M. Barnett, J.E. Lees, D.J. Bassford, J.S. Ng
Nuclear Instrumentation and Method in Physics A 67310-15, 2012

Absorption characteristics of GaAsBi/GaAs diodes in the near-infrared
C.J. Hunter, F. Bastiman, A.R. Mohmad, R. Richards, J.S. Ng, J.P.R. David, S.J. Sweeney
IEEE Photonics Technology Letters 24(23) 2194, 2012

Effects of rapid thermal annealing on GaAsBi alloys
A.R. Mohmad, F. Bastiman, C.J. Hunter, R. Richards, J.S. Ng, J.P.R. David, S.J. Sweeney
Applied Physics Letters 101(1) 012106, 2012

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
F. Bastiman, A.R.B. Mohmad, J.S. Ng, J.P.R. David, S.J. Sweeney
Journal of Crystal Growth 338(1) 57-61, 2012

Room temperature photoluminescence intensity enhancement in GaAs1-xBix
A.R. Mohmad, F. Bastiman, J.S. Ng, S.J. Sweeney, J.P.R. David
Physica Status Solidi 9(2) 259-261, 2012

Ptychographic electron microscopy using high-angle dark-field scattering for sub-nanometre resolution imaging
M.J. Humphry, B. Kraus, A.C. Hurst, A.M. Maiden and J.M. Rodenburg
Nature Communications, vol 3, pp 730, 2012

Quantitative phase contrast optimised cancerous cell differentiation via ptychography
D. Claus, A.M. Maiden, F.C Zhang, F.G.R. Sweeney, M.J. Humphry, H. Schluesener and J.M. Rodenburg
Optics Express, vol 20, pp 9911-9918, 2012

An annealing algorithm to correct positioning errors in ptychography
A.M. Maiden, M.J. Humphry, M.C. Sarahan, B. Kraus and J.M. Rodenburg
Ultramicroscopy, vol 102, pp 64-72, 2012

Ptychographic transmission microscopy in three dimensions using a multi-slice approach
A.M. Maiden, M.J. Humphry and J.M. Rodenburg
Journal of the Optical Society of America, vol 29, pp 1606-1614, 2012

Dit extraction from conductance-frequency measurements using transmission line model in weak inversion of poly/TiN/HfO2 nMOSFETs
S. Sicre and M.M. De Souza
IEEE Transactions Electron Devices, 59, 827, 2012

Electronic bandgaps of semiconductor zig-zag carbon nanotubes using GW calculations
P. Umari, O. Petrenko, S. Tiaioli and M.M. De Souza
Journal of Chemical Physics, 136, 181101, 2012

A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes
J.E. Green, R.C. Tozer, J.P.R. David
IOP Meas. Sci. Technol., 23, 2012

Stability in Small Signal Common Base Amplifiers
J.E. Green, R.C. Tozer, J.P.R. David
IEEE Trans, CAS 2012

Excess noise characteristics of thin AlAsSb APDs
J. Xie, S. Xie, R.C. Tozer, C.H. Tan
IEEE Trans, EED59, pp. 1475-1479, 2012

Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
J.E. Green, W.S. Loh, A.R.J. Marshall, B.K. Ng, R.C. Tozer, J.P.R. David, S.I. Soloviev, P.M. Sandvik
IEEE Trans, EED59, pp. 1030-1036, 2012

Epitaxial Growth of relaxed germanium layers by RP-CVD on (110) and (111) silicon substrates
V.H. Nguyen, A. Dobbie, M. Myronov, D.J. Norris, T. Walther and D.R. Leadley
Thin Solid Films, vol 520, pp 3222-3226, 2012

Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEm, Proc. ICNS-9, Glasgow, UK
H. Amari, I.M. Ross, T. Wang and T. Walther
Physica Stata Soldi, vol 9(3-4), pp 546-549, 2012

Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope, Proc. Symp, FE-MRS Spring meeting 2011, Nice, France
H. Amari, M.J. Kappers, C.J. Humphreys, C. Chèze and T. Walther
Physica Stata Soldi, vol 9 (3-4), pp 1079-1082, 2012