Dr Kean Boon Lee

Staff Photo

Contact Details


Tel: +44 (0)114 22 25836

ORCID: 0000-0002-5374-2767


  • Ph.D. in Electronic and Electrical Engineering, University of Sheffield, UK
  • M.Eng in Electronic Engineering (Solid State Devices), University of Sheffield, UK

Research Activities

  • High voltage and high current AlGaN/GaN-based transistors
  • High speed/frequency RF GaN transistors
  • High temperature operation of GaN-based transistors
  • Monolithic integrations of GaN electronics
  • Novel vertical high voltage (>600V) GaN transistors
  • UV LEDs (wavelength: 250-350nm) design and device fabrication


  • Lecturer in GaN Electronic Devices

I graduated from the Department (M.Eng 2004, Ph.D. 2010). After 2 years as a post-doctoral research associate working on gallium nitride (GaN) electronic devices for radio-frequency (RF) applications at the Department, I moved to Singapore and joined Institute of Microelectronics as a scientist. I spent a year and a half at Singapore to develop next generation 600V high power GaN transistors for power conversion applications. At 2013, I returned to the department and I am currently a lecturer in GaN Electronic Devices.

My main research interest is on GaN semiconductor material and devices for both optoelectronic and electronic applications. Visible light emitting diodes (LEDs) found in solid-state light bulbs and TV screens are mainly made from GaN. In addition to visible light, GaN is also capable in emitting ultra- violet (UV) light efficiently which can be used in applications such as water purifications. I have spent nearly 4 years in my Ph.D. working in this area and our group has demonstrated the first GaN-based UV LEDs in the UK. My current research focuses on utilising GaN in electronics applications including radio-frequency (such as amplifiers in 5G mobile communications and military radars) and high speed power conversion (such as 48V-1kV DC power supplies, inverters for photovoltaic systems). I am particularly interested in employing novel integration techniques to achieve high efficiency GaN electronic devices and systems.

I am a member of committee of the UK Nitrides Consortium and program committee member for UK Semiconductor Conference.