Dr Chaoyuan Jin
Semiconductor Materials and Devices Group
tel: +44 (0)114 222 5176
room: F164a, The Sir Frederick Mappin Building
- 10.2004 – 05.2008 Ph.D. in Electronic and Electrical Engineering, University of Sheffield, UK
- 09.2000 – 07.2003 M.Sc. in Microelectronics and Solid-State Electronics, Institute of Semiconductors, Chinese Academy of Sciences, China
- 09.1996 – 07.2000 B.Sc. in Physics, Nanjing University, China
- 10.2015 – now Vice-Chancellor’s Fellow, University of Sheffield, UK.
- 01.2015 – 10.2015 Senior Photonics Scientist, Effect Photonics B.V., the Netherlands.
- 04.2013 – 12.2014 Optical Chip Designer, Effect Photonics B.V., the Netherlands.
- 10.2010 – 04.2013 Postdoc, Eindhoven University of Technology, the Netherlands.
- 10.2008 – 10.2010 JSPS Research Fellow, Kobe University, Japan.
- 03.2008 – 10.2008 Research Fellow, Kobe University, Japan.
- 08.2003 – 09.2004 Research Assistant, Institute of Semiconductors, Chinese Academy of Sciences, China.
- Photonic switches and micro-/nano-cavity lasers;
- Ultrafast photonics and ultrafast optical spectroscopy;
- Photonic quantum devices;
- Nano-photonic integration.
One of the key solutions to reduce the global energy consumption of today’s information systems is to deploy all-optical networks between an ever-increasing number of electronic processing units such as data centres, cell towers, computers, and smart phones. The ambition behind my research activities is to develop novel photonic components to replace those relatively low-speed and energy-consuming electronic devices that are widely used in today’s fibre communication systems and computer systems. In this regard, photonic switch is one of the important devices that encodes information stream into ultrafast optical pulses. To achieve the energy efficient goal, we have formulated the fundamental limitation of photonic switches and find out there are two general ways to further scale down the energy consumption at ultrafast operation speed. One of the methods is to make the device footprint ultra-small. This points to the research domain of nano-photonics. Another method is to increase the field confinement of a so-called optical cavity, leading to the research field of cavity quantum electrodynamics. Combining those two research directions together, by efficiently controlling the field confinement of nano-photonic devices, we can further reduce the energy consumption of photonic switches without sacrificing the operation speed. This overcomes the long-term energy-barrier besetting conventional photonic switching technologies for a few decades.
Our fundamental breakthroughs enable several practical devices that can be further developed into a research subject on ultrafast photonic integration. The integrated photonic circuit can act as an on-chip transmitter that generates encoded signals consisting of ultrafast lasing pules. The success of building up such nano-photonic circuit offers an attractive solution for some of today’s extremely challenging problems, such as how to make the multiple-core computer processor more powerful and cooler.
Optical networks are already the default solution for high capacity and long distance data transfer, but for optics to succeed in short-reach information networks, the technology must become intimately integrated. This poses tremendous engineering challenges and yet in the meantime provides enormous opportunities for investigations into optical information processing at nano-scale. Our research projects will form a part of the strong research efforts to seek the possibility to use semiconductor nano-materials in the global research framework of nano-photonic interconnection.
Due to the importance of the research topic, our results have gained great international impact. As an example of significance, the recent work on the ultrafast control of spontaneous emission has been selected as one of the 30 most existing achievements in the research field of optics in 2014 by Optics & Photonics News, the flagship news magazine of the Optical Society. An artistic illustration of the work has been used on the colour background of the special issue “Optics in 2014”
- R. Johne, R. Schutjens, S. Fattahpoor, C.-Y. Jin, and A. Fiore, “Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system,” Phys. Rev. A, vol. 91, pp. 063807(1-5), 2015.
- C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission,” Nature Nanotechnology, vol. 9, pp. 886-890, 2014.
- C.Y. Jin, O. Wada, “Photonic switching devices based on semiconductor nanostructures,” J. Phys. D. Vol. 47, pp. 133001(1-17), 2014. (Invited Topical Review)
- J. Yuan, C.Y. Jin, M. Skacel, A. Urbańczyk, T. Xia, P.J. van Veldhoven, and R. Nötzel, “Coupling of InAs quantum dots to the plasmon resonance of In nanoparticles by metal-organic vapour phase epitaxy,” Appl. Phys. Lett. vol. 102, pp. 191111(1-4), 2013. (as the correspondence author)
- J. Yuan, H. Wang, P.J. van Veldhoven, J. Wang, T. de Vries, B. Smalbrugge, C.Y. Jin, P. Nouwens, E.J. Geluk, A.Yu. Silov, R. Nötzel, “Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots,” Appl. Phys. Lett. vol. 98, pp. 201904(1-3), 2011.
- C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Observation of phase shifts in vertical cavity quantum dot switches,” Appl. Phys. Lett. vol. 98, pp. 231101(1-3), 2011
- C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada, “Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector,” Appl. Phys. Lett. vol. 96, pp.151104(1-3), 2010.
- C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity,” IEEE J. Quantum Electron. vol. 46, pp. 1582-1589, 2010.
- C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity,” Appl. Phys. Lett. vol. 95, pp. 021109(1-3), 2009.
- C.Y. Jin, H.Y. Liu, Q. Jiang, M. Hopkinson, and O. Wada, “Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels,” Appl. Phys. Lett. vol. 93, pp. 161103(1-3), 2008.
- C.Y. Jin, H.Y. Liu, S.Y. Zhang, and M. Hopkinson, "Low-threshold 1.3 μm GaInNAs quantum well lasers using quaternary barriers," IEEE Photon. Technol. Lett. vol. 20, pp. 942-944, 2008.
- H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther, and A.G. Cullis, “1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer,” Appl. Phys. Lett. vol. 92, pp. 111906(1-3), 2008.
- Z.Y. Zhang, I.J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, and R.A. Hogg, “Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes,” Appl. Phys. Lett. vol. 91, pp. 081112(1-3), 2007.
- C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray, “Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers,” Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.
- C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, and D.J. Mowbray, “Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.
- H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, and D.J. Mowbray, “Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer,” Electron. Lett. vol. 43, pp. 670-672, 2007.
- C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, and M. Hopkinson, “Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser,” IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.
- T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, and M.S. Skolnick, “1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature,” Electron. Lett. vol. 42, pp. 922-923, 2006.
- M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, and R. Airey, “1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density”, Electron. Lett. vol. 42, pp. 923-924, 2006.
- H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, and A.G. Cullis, “Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells,” Appl. Phys. Lett. vol. 88, pp. 191907-191909, 2006.
- H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, and R.A. Hogg, “p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency,” Appl. Phys. Lett. vol. 89, pp. 073113-073115, 2006.
- C.Y. Jin, Y.Z. Huang, L.J. Yu, and S.L. Deng, “Numerical and theoretical analysis of the crosstalk in linear optical amplifiers,” IEEE J. Quantum Electron. vol. 41, pp. 636-641, 2005.
- C.Y. Jin, Y.Z. Huang, L.J. Yu, and S.L. Deng, “Detailed model and investigation of gain saturation and carrier spatial hole burning for semiconductor optical amplifier with gain clamping by a vertical laser field,” IEEE J. Quantum Electron. vol. 40, pp. 513-518, 2004.
A complete list of publications is available via the links to the right.
- C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, K. Akahane, and O. Wada, “Quantum dot switches: towards nanoscale power-efficient all-optical signal processing,” Chapter in Quantum Dot Devices, Eds. Zhiming M. Wang, in series: Lecture Notes in Nanoscale Science and Technology, Springer, 2012.
- C.Y. Jin, R. Johne, M.Y. Swinkels, R. Schutjens, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Controlling spontaneous emission by real-time shaping the vacuum field in nano-photonic structures,” SPIE Newsroom, 2015.
- C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Controlling spontaneous emission beyond the radiative lifetime,” Optics & Photonics News, vol. 25, pp. 44, 2014.
- M. Maragkou, “Spontaneous emission: real-time control,” Nature Photonics, vol. 8, pp. 880, 2014.
- M. Vianen, “Ultrafast remote switching of light emission,” Optik & Photonik, vol. 9, pp. 16, 2014.
- M. Marquit, “Vertical cavity quantum switch could lead us away from electronics-based computing,” Phys.org, 2011.