Professor John DavidProfessor John David

Professor of Semiconductor Materials & Devices, FIEEE, FIET

email : j.p.david@sheffield.ac.uk

tel: +44 (0) 114 222 5185


B.Eng (Electronics), University of Sheffield 1976

PhD (Semiconductors) , University of Sheffield 1983

  • Research Associate, University of Sheffield (1982-2001)
  • Senior Characterisation Engineer, Marconi Optical Components, Caswell (2001-2002)
  • Senior Lecturer, University of Sheffield (2002-2004)
  • Professor, University of Sheffield (2004-present)
  • Head of Department, Electronic & Electrical Engineering, University of Sheffield (2009-2013)
  • Fellow of the Institute of Electrical & Electronics Engineers
  • Fellow of the Institution of Engineering & Technology
  • IEEE LEOS Distinguished Lecturer (2002-2004)

Responsibilities

  • Undergraduate and M.Sc. Admissions Strategy
  • Departmental International Student Advisor

Research Activities

Impact Ionisation

  • Experimental study of impact ionisation, avalanche multiplication and breakdown in a wide range of materials and structures.
  • Theoretical modelling into hot carrier behaviour and the impact ionisation process.

Photodiodes and Avalanche Photodiodes

  • Characterisation of a range of photodiodes and avalanche photodiodes (APDs), covering the wavelength range from the UV to the LWIR. Materials studied include SiC, Si and most III-V alloys including AlInP, InAs, InP, AlGaAs and InGaAs.
  • Investigation into structures such as MQWs, Type II superlattices and QDIPs for advanced detectors in the MWIR and LWIR.
  • Development of single photon detectors (SPADs) in the near-IR.
  • Novel circuit design and development for enabling low excess noise measurements and quenching circuits for the SPADs.

Bismuth containing alloys

  • Growth and characterisation of GaAsBi and InAsBi by MBE.
  • Development of bulk and MQW diodes of GaAsBi, InAsBi for a range of opto-electronic devices such as solar cells, IR-photodiodes and lasers.