Professor John David
Professor of Semiconductor Materials & Devices, FIEEE, FIET
email : email@example.com
tel: +44 (0) 114 222 5185
B.Eng (Electronics), University of Sheffield 1976
PhD (Semiconductors) , University of Sheffield 1983
- Research Associate, University of Sheffield (1982-2001)
- Senior Characterisation Engineer, Marconi Optical Components, Caswell (2001-2002)
- Senior Lecturer, University of Sheffield (2002-2004)
- Professor, University of Sheffield (2004-present)
- Head of Department, Electronic & Electrical Engineering, University of Sheffield (2009-2013)
- Fellow of the Institute of Electrical & Electronics Engineers
- Fellow of the Institution of Engineering & Technology
- IEEE LEOS Distinguished Lecturer (2002-2004)
- Undergraduate and M.Sc. Admissions Strategy
- Departmental International Student Advisor
- Experimental study of impact ionisation, avalanche multiplication and breakdown in a wide range of materials and structures.
- Theoretical modelling into hot carrier behaviour and the impact ionisation process.
Photodiodes and Avalanche Photodiodes
- Characterisation of a range of photodiodes and avalanche photodiodes (APDs), covering the wavelength range from the UV to the LWIR. Materials studied include SiC, Si and most III-V alloys including AlInP, InAs, InP, AlGaAs and InGaAs.
- Investigation into structures such as MQWs, Type II superlattices and QDIPs for advanced detectors in the MWIR and LWIR.
- Development of single photon detectors (SPADs) in the near-IR.
- Novel circuit design and development for enabling low excess noise measurements and quenching circuits for the SPADs.
Bismuth containing alloys
- Growth and characterisation of GaAsBi and InAsBi by MBE.
- Development of bulk and MQW diodes of GaAsBi, InAsBi for a range of opto-electronic devices such as solar cells, IR-photodiodes and lasers.