Below are the references for journal articles and conference papers authored by Professor Chee Hing Tan.

  • For free access to the abstract/article click on the 'View this article in WRRO' hyperlink, where available. This will redirect you to the White Rose Research Online (WRRO) website.
  • Alternatively, click on the hyperlinked title to read the abstract/article. Please note that access to these may require a paid subscription.

Journal articles

Conference proceedings papers

  • Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors-towards Geiger-mode detection. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10212
  • Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016. View this article in WRRO
  • Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44APD. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
  • Zhou X, Xie S, Zhang S, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
  • Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. 2016 IEEE 6th International Conference on Photonics, ICP 2016
  • Xie S, Zhou X, Zhang S, Ng JS, Tan CH & IEEE (2016) Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
  • Auckloo A, Tozer R, David J & Tan CH (2015) A low noise op-amp transimpedance amplifier for LIDAR applications. 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 (pp 590-593)
  • White BS, Sandall IC & Tan CH (2015) Planar InAs avalanche photodiodes. 2015 IEEE Photonics Conference, IPC 2015 (pp 454-455)
  • Zhou X, Ng JS & Tan CH (2015) InAs photodiode for low temperature sensing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9639 View this article in WRRO
  • Sandall IC, Bastiman F, White B, Richards R, David J & Tan CH (2014) InAsBi photodiode operating in the MWIR. 2014 IEEE Photonics Conference, IPC 2014 (pp 356-357)
  • Sandall I, White B & Tan CH (2014) InAs APD with solid state photomultiplier characteristics. 2014 IEEE Photonics Conference, IPC 2014 (pp 354-355)
  • White BS, Sandall I & Tan CH (2014) Planar InAs p-i-n photodiodes fabricated using ion implantation. 2014 IEEE Photonics Conference, IPC 2014 (pp 352-353)
  • Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) Demonstration of an InAsBi photodiode operating in the MWIR. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9254
  • Ker PJ, Tan CH & David JPR (2013) High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80)
  • Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
  • Sandall I, Tan CH, Smith A & Gwilliam R (2012) Planar InAs photodiodes fabricated using He ion implantation. 2012 IEEE Photonics Conference, IPC 2012 (pp 165-166)
  • Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168)
  • Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221)
  • Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
  • Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2012) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
  • Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2012) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
  • Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
  • Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
  • Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277)
  • Tan CH, Xie S & Xie J (2011) Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 278-279)
  • Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
  • Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707)
  • Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer. INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
  • Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838
  • Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
  • Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) High gain InAs electron-avalanche photodiodes for optical communication. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412)
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
  • Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
  • Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
  • David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
  • Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
  • Marshall ARJ, Tan CH & David JPR (2009) The development of extremely low noise InAs electron APDs for SWIR active or passive imaging. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
  • Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
  • Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
  • Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
  • Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297)
  • Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Low noise InAs avalanche photodiodes for high sensitivity FPAs. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
  • Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) Multiple stack quantum dot infrared photodetectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
  • Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) Infrared photodiodes based on Type-II strained layer superlattices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
  • Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
  • Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
  • Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
  • Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
  • Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
  • Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
  • Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
  • Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
  • Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
  • Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
  • Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
  • Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
  • Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
  • Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80)
  • Houston PA, Helme J, Ng WK & Tan CH (2004) InP/InGaAs heterojunction phototransitors for optoelectronic receivers. 2004 IEEE International Conference on Semiconductor Electronics, Proceedings (pp A1-A5)
  • Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
  • Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
  • Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
  • Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
  • David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
  • Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
  • Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 230-235)
  • Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 295-298)

Patents

  • Tan CH () Ultra Low Noise InAs Avalanche Photodiodes. GB0723858.7 (UK). Appl. 01 Jan 1970.
  • Tan CH () High Gain-Bandwidth Product Avalanche Photodiode. (UK). Appl. 01 Jan 1970.

Other

Datasets