Dr Andrey KrysaDr Andrey Krysa

Senior Research Fellow

email : a.krysa@sheffield.ac.uk

tel: +44 (0) 114 222 5819


Education

A.B. Krysa graduated (quantum electronics) from the Special Department of Physics, founded and led by Nobel Laureate Nicolay Basov at the Moscow Engineering Physics Institute, Moscow, Russia in 1990.

In 1997, he obtained his PhD (solid state physics, "Interaction of atomic hydrogen with defects in II-VI compounds") at the Lebedev Physical Institute, Russian Acad. Sci., Moscow.

Research profile

Research profile
From 1991-1998 and in 2001 A.B. Krysa conducted research on II-VI semiconductors, group III nitrides and their technology at the Lebedev Physics Institute.

In 1998, he was awarded a prestigious Alexander von Humboldt Research Fellowship and during 1999-2000 worked at the Institut für Halbleitertechnik, RWTH Aachen, Germany on the problems of epitaxy of ZnSe based structures.

A.B. Krysa joined the EPSRC National Epitaxy Facility at the University of Sheffield in 2001 and has been concerned with the study of group III arsenides and phosphides, and the development of growth technologies for relevant heterostructures and semiconductor optoelectronic devices. Many of his developments were world’s first and set benchmarks in the field of semiconductor technology.

He has pioneered a growth technology of quantum cascade lasers entirely based on MOVPE. InGaAs/InAlAs and GaAs/AlGaAs QCLs of various gain region and waveguide designs have been fabricated covering the spectral range of 4-20 µm. Worldwide, there has been a general acceptance of this technology allowing high output manufacturing QCLs. 10 invited talks delivered by our group on the subject at key international conferences indicate the importance of this development. At present, many research groups and industrial companies routinely use our technological approach for QCL fabrication.

Recently, A.B. Krysa has engineered an epitaxial process of InAs QDs for lasers and entangled photon emitters operating around the telecom band of 1.55 µm (collaboration with Toshiba Research Europe).

Other state-of-the-art developments include

  • catalyst-free GaAs and InP nanowires
  • InP quantum dots for applications in lasers, optical modulators, photovoltaics and spintronics
  • Optically and e-beam pumped GaInP/AlGaInP vertical cavity lasers with resonance-periodic gain
  • InGaAs/InP single photon avalanche diode detectors
  • InGaAsP MQW asymmetric Fabry-Perot modulators
  • 1.55 µm InGaAs/AlGaInAs on InP lasers
  • Al(Ga)InP structures for blue-green detectors, radioisotope micro batteries and X-ray spectrometry applications
  • Long wavelength detectors based on InAs

A.B. Krysa is a co-author of ~100 publications in peer-reviewed research journals. He has delivered 10 invited talks at international conferences.

He is a recipient of the IET Optoelectronics Premium Award 2008.

Selected invited conference talks:

“MOVPE of InAs QDs on InP for single photon emitters and laser applications”, Symposium on the Coherent Optical Radiation of Semiconductor Compounds and Structures, 22–25 November 2017, Moscow-Zvenigorod, Russia

“Metalorganic vapour phase epitaxy of GaInAs/AlInAs and GaAs/AlGaAs quantum cascade laser structures”, The 11th International Conference on Infrared Optoelectronics: Materials & Devices (MIOMD-XI), 4-8 September 2012, Chicago, IL, USA

“In-situ optical monitoring of quantum cascade lasers growth by MOVPE”, LayTec's in-situ seminar (in conjunction with ICMOVPE-XVI), 23 May 2012, Busan, Korea

“InP/AlGaInP quantum dot lasers emitting at 700-800 nm”, Symposium “Semiconductor Lasers: Physics and Technology”, 10-12 November 2010, Ioffe Institute, St Petersburg, Russia

“Recent advances in quantum cascade lasers grown by MOVPE”, The 3rd International Conference on Middle Infrared Coherent Sources 2009 (MICS’2009), 8-12 June 2009, Trouville, France

“Quantum cascade lasers grown by MOVPE”, Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XIII), 22-26 May 2006, Phoenix Seagaia Resort, Miyazaki, Japan

Selected publications

T. Müller, J. Skiba-Szymanska, A.B. Krysa, J. Huwer, M. Felle, M. Anderson, R. M. Stevenson, D. A. Ritchie, A. J. Shields
A quantum light emitting diode for the standard telecom window around 1550 nm
https://arxiv.org/abs/1710.03639 , submitted to Nature Communications (2017)

A.B. Krysa, J.S. Roberts, J. Devenson, R. Beanland, I. Karomi, S. Shutts, P.M. Smowton
InAsP/AlGaInP/GaAs QD laser operating at∼ 770 nm
Journal of Physics: Conference Series 740, 012008 (2016),

J.S. Cheong, J.S.L. Ong, J.S. Ng, A.B. Krysa, J.P.R. David
Al0.52In0.48P SAM-APD as a Blue-Green Detector
IEEE Journal of Selected Topics in Quantum Electronics 20, 3801305 (2014)

M.N. Makhonin, A.P. Foster, A.B. Krysa, P.W. Fry, D.G. Davies, T. Grange, T. Walther, M.S. Skolnick, L.R. Wilson
Homogeneous Array of Nanowire-Embedded Quantum Light Emitters
Nano Letters 13, 861 (2013)

A.B. Krysa, D.G. Revin, J.P. Commin, C.N. Atkins, K. Kennedy, Y. Qiu, T. Walther, J.W. Cockburn
Room-temperature GaAs/AlGaAs quantum cascade lasers grown by metal–organic vapor phase epitaxy
IEEE Photonics Technology Letters 23, 774 (2011)

E.A. Chekhovich, A.B. Krysa, M.S. Skolnick, A.I. Tartakovskii
Light-polarization-independent nuclear spin alignment in a quantum dot
Physical Review B 83, 125318 (2011)

P.J. Schlosser, J.E. Hastie, S. Calvez., A.B. Krysa, M.D. Dawson
InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755 nm
Optics Express 17, 21782 (2009)

A.B. Krysa, S.L. Liew, J.C. Lin, J.S. Roberts, J. Lutti, G.M. Lewis, P.M. Smowton
Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740nm
Journal of Crystal Growth 298, 663 (2007)

J.E. Hastie, L.G. Morton, A.J. Kemp, M.D. Dawson, A.B. Krysa, J.S. Roberts
Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser
Applied Physics Letters 89, 061114 (2006)

S. Pellegrini, R.E. Warburton, L.J.J. Tan, J.S. Ng, A.B. Krysa, K. Groom, J.P.R. David, S. Cova, M.J. Robertson, G.S. Buller
Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector
IEEE Journal of Quantum Electronics 42, 397 (2006)

C. Pflügl, M. Austerer, W. Schrenk, S. Golka, G. Strasser, R.P. Green, L.R. Wilson, J.W. Cockburn, A.B. Krysa, J.S. Roberts
Single-mode surface-emitting quantum-cascade lasers
Applied Physics Letters 86, 211102 (2005)

A.B. Krysa, J.S. Roberts, R.P. Green, L.R. Wilson, H. Page, M. Garcia, J.W. Cockburn
MOVPE grown quantum cascade lasers operating at ~9 µm wavelength
Journal of Crystal Growth 272, 682 (2004)

Yu.V. Bondarev, V.I. Kozlovsky, A.B. Krysa, J.S. Roberts, Ya.K. Skasyrsky
Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure
Journal of Crystal Growth 272, 559 (2004)

R.P. Green, A.B. Krysa, J.S. Roberts, D.G. Revin, L.R. Wilson, E.A. Zibik, W.H. Ng, J.W. Cockburn
Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy
Applied Physics Letters 83, 1921 (2003)

C. P. Liu, A. J. Seeds, J. S. Chadha, P. N. Stavrinou, G. Parry, M. Whitehead, A.B. Krysa, J. S. Roberts
Design, Fabrication and Characterisation of Normal-Incidence 1.56-mm Multiple-Quantum-Well Asymmetric Fabry-Perot Modulators for Passive Picocells
IEICE Trans. on Electronics E86-C, 1281 (2003)

V.I. Kozlovsky, A.B. Krysa, Yu.V. Korostelin, Yu. G. Sadofyev
MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(100) and ZnTe(100) substrates
Journal of Crystal Growth 214-215, 35 (2000)

A.B. Krysa, Yu.V. Korostelin, V.I. Kozlovsky, P.V. Shapkin, H. Kalisch, R. Rüland, M. Heuken, K. Heime
ZnSe/ZnMgSSe structures on ZnSSe substrates
Journal of Crystal Growth 214-215, 355 (2000)

V.I. Kozlovsky, A.B. Krysa, W. Taudt, M. Heuken
Electron beam activation of acceptors in MOVPE ZnSe:N
Journal of Crystal Growth 184-185, 435 (1998)

V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U.K. Mishra, L. Coldren, S. DenBaars, M. D. Tiberi, T. George
Electron Beam Pumped MQW InGaN/GaN Laser
MRS Internet Journal of Nitride Semiconductor Research 2, art.38 (1997)

V.I. Kozlovskii, Yu.V. Korostelin, A.B. Krysa, Ya.K. Skasyrskii, P.V. Shapkin
Acceptor passivation with hydrogen in ZnSe single crystals
Bulletin of the Lebedev Physics Institute, No.2, pp. 33-37 (1996)