Dr Andrey KrysaDr Andrey Krysa

Research Fellow

email : a.krysa@sheffield.ac.uk

tel: +44 (0) 114 222 5819


Education

A.B. Krysa graduated (quantum electronics) from the Special Department of Physics, founded and led by Nobel Laureate Nicolay Basov at the Moscow Engineering Physics Institute, Moscow, Russia in 1990.

In 1997, he obtained his PhD (solid state physics, "Interaction of atomic hydrogen with defects in II-VI compounds") at the Lebedev Physics Institute, Russian Acad. Sci., Moscow.

Research profile

From 1991-1998 and in 2001 A.B. Krysa conducted research on II-VI semiconductors, group III nitrides and their technology at the Lebedev Physics Institute.

In 1998, he was awarded a prestigious Alexander von Humboldt Research Fellowship and during 1999-2000 worked at the Institut für Halbleitertechnik, RWTH Aachen, Germany on the problems of epitaxy of ZnSe based structures.

A.B. Krysa joined the National Centre for III-V Technologies in 2001 and has been concerned with the study of group III arsenides and phosphides and the development of growth technologies for relevant heterostructures and semiconductor devices. At present he concentrates on physics and technology of quantum cascade lasers and InP quantum dots.

He has pioneered (in collaboration with the group of Prof. Cockburn) a growth technology of quantum cascade lasers entirely based on MOVPE. InGaAs/InAlAs and GaAs/AlGaAs QCLs of various gain region and waveguide designs have been fabricated covering the spectral range of 4-20 µm. Worldwide, there has been a general acceptance of this technology allowing high output manufacturing QCLs. 9 invited talks delivered by our group on the subject at key international conferences indicate the importance of this development. At present, many research groups and industrial companies routinely use our technological approach for QCL fabrication.

Other state-of-the-art developments include

  • InP quantum dots for applications in lasers, optical modulators, photovoltaics and spintronics
  • GaInP/AlGaInP vertical-external-cavity surface-emitting lasers
  • InGaAs/InP single photon avalanche diode detectors
  • InGaAsP MQW asymmetric Fabry-Perot modulators
  • e-beam pumped GaInP/AlGaInP structures with resonance-periodic gain for laser projectors
  • InAs QDs in AlGaInAs and InGaAsP matrices on InP, and InAs QD lasers at ~1.8 µm
  • 1.55 µm InGaAs/AlGaInAs on InP lasers
  • catalyst-free GaAs and InP nanowires

A.B. Krysa is a co-author of ~100 publications in peer-reviewed research journals. He has delivered 8 invited talks at international conferences.

He is a recipient of the IET Optoelectronics Premium Award 2008.

Selected publications

E.A. Chekhovich, M.M. Glazov, A.B. Krysa, M. Hopkinson, P. Senellart, A. Lemaître, M.S. Skolnick, A.I. Tartakovskii
Element-sensitive measurement of the hole–nuclear spin interaction in quantum dots
Nature Physics 9 (2013) 74–78

M.N. Makhonin, A.P. Foster, A.B. Krysa, P.W. Fry, D.G. Davies, T. Grange, T. Walther, M.S. Skolnick, L.R. Wilson
Homogeneous Array of Nanowire-Embedded Quantum Light Emitters
Nano Letters 13 (2013)

E.A. Chekhovich, K.V. Kavokin, J. Puebla, A.B. Krysa, M. Hopkinson, A.D. Andreev, A.M. Sanchez, R. Beanland, M.S. Skolnick, A.I. Tartakovskii
Structural analysis of strained quantum dots using nuclear magnetic resonance
Nature Nanotechnology 7 (2012) 646–650

S.N. Elliott, P.M. Smowton, A.B. Krysa, R. Beanland
The effect of strained confinement layers in InP self-assembled quantum dot material
Semiconductor Science and Technology 27 (2012) 094008

D.G. Revin, R.S. Hassan, C.N. Atkins, J.W. Cockburn, A.B. Krysa, K. Kennedy, Y. Wang, A. Belyanin
Spectroscopic study of transparency current in mid-infrared quantum cascade lasers
Optics Express 20 (2012) 18925-18930

M. Butkus, G. Robertson, G. Maker, G. Malcolm, C. Hamilton, A.B. Krysa, B.J. Stevens, R.A. Hogg, Y. Qiu, T. Walther, E. U. Rafailov
High repetition rate Ti:sapphire laser mode-locked by InP quantum-dot saturable absorber
IEEE Photonics Technology Letters 23 (2011) 1603-1605

C.N. Atkins, A.B. Krysa, D.G. Revin, K. Kennedy, J.P. Commin and J.W. Cockburn
Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide
Electronics Letters 47 (2011) 1193-1194

D.G. Revin, J.P. Commin, S.Y. Zhang, A.B. Krysa, K. Kennedy, J.W. Cockburn
InP-based midinfrared quantum cascade lasers for wavelengths below 4 μm
IEEE Journal of Selected Topics in Quantum Electronics 17 (2011) 1417-1425

A.B. Krysa, D.G. Revin, J.P. Commin, C.N. Atkins, K. Kennedy, Y. Qiu, T. Walther, J.W. Cockburn
Room-temperature GaAs/AlGaAs quantum cascade lasers grown by metal–organic vapor phase epitaxy
IEEE Photonics Technology Letters 23 (2011) 774-776

D.G. Revin, K. Kennedy, J.P. Commin, Y. Qiu, T. Walther, J.W. Cockburn, A.B. Krysa
High temperature λ ~ 4 μm In0.7Ga0.3As/In0.34Al0.66As quantum cascade lasers grown by MOVPE
Electronics Letters 47 (2011) 559-560

P.M. Smowton, S.N. Elliott, S. Shutts, M. Al-Ghamdi, A.B. Krysa
Temperature-dependent threshold current in InP quantum-dot lasers
IEEE Journal of Selected Topics in Quantum Electronics 17 (2011) 1343-1348

E.A. Chekhovich, A.B. Krysa, M.S. Skolnick, A.I. Tartakovskii
Light-polarization-independent nuclear spin alignment in a quantum dot
Physical Review B, 83 (2011) art. no. 125318

E.A. Chekhovich, A.B. Krysa, M.S. Skolnick, A.I. Tartakovskii
Direct measurement of the hole-nuclear spin interaction in single InP/GaInP quantum dots using photoluminescence spectroscopy
Physical Review Letters, 106 (2011) art. no. 027402

Y. Qiu, A.B. Krysa, T. Walther
STEM imaging of InP/AlGaInP quantum dots
Journal of Physics: Conference Series, 244 (2010), art. no. 012087

W. Langbein, V. Cesari, F. Masia, A.B. Krysa, P. Borri, P.M. Smowton
Ultrafast gain dynamics in InP quantum-dot optical amplifiers
Applied Physics Letters, 97 (2010), art. no. 211103

Luxmoore I.J., Ahmadi E.D., Wasley N.A., Fox A.M., Tartakovskii A.I., Krysa A.B., Skolnick M.S.
Control of spontaneous emission from InP single quantum dots in GaInP photonic crystal nanocavities
Applied Physics Letters, 97 (2010), art. no. 181104

E.A. Chekhovich, M.N. Makhonin, K.V. Kavokin, A.B. Krysa, M.S. Skolnick, A.I. Tartakovskii
Pumping of nuclear spins by optical excitation of spin-forbidden transitions in a quantum dot
(2010) Physical Review Letters, 104 (6), art. no. 066804

Schlosser P.J., Hastie J.E., Calvez S., Krysa A.B., Dawson M.D.
InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755 nm
(2009) Optics Express, 17 (24), pp. 21782-21787

Skiba-Szymanska J., Chekhovich E.A., Nikolaenko A.E., Tartakovskii A.I., Makhonin M.N., Drouzas I., Skolnick M.S., Krysa A.B.
Overhauser effect in individual InP/Gax In1-xP dots
(2008) Physical Review B - Condensed Matter and Materials Physics, 77 (16), art. no. 165338

A.B. Krysa, S.L. Liew, J.C. Lin, J.S. Roberts, J. Lutti, G.M. Lewis, P.M. Smowton
Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740nm
Journal of Crystal Growth 298 (2007) 663-666

J.E. Hastie, L.G. Morton, A.J. Kemp, M.D. Dawson, A.B. Krysa, J.S. Roberts
Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser
Applied Physics Letters 89 (2006) 061114

S. Pellegrini, R.E. Warburton, L.J.J. Tan, J.S. Ng, A.B. Krysa, K. Groom, J.P.R. David, S. Cova, M.J. Robertson, G.S. Buller
Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector
IEEE Journal of Quantum Electronics 42 (2006) 397-403

M. Bahriz, V. Moreau, J. Palomo, R. Colombelli, D.A. Austin, J.W. Cockburn, L.R. Wilson, A.B. Krysa, J.S. Roberts
Room-temperature operation of λ≈7.5 µm surface-plasmon quantum cascade lasers
Applied Physics Letters 88 (2006) 1831105

D.G. Revin, L.R. Wilson, J.W. Cockburn, A.B. Krysa, J.S. Roberts, R.J. Airy
Intersubband spectroscopy of quantum cascade lasers under operating conditions
Applied Physics Letters 88 (2006) 131105

C. Pflügl, M. Austerer, W. Schrenk, S. Golka, G. Strasser, R.P. Green, L.R. Wilson, J.W. Cockburn, A.B. Krysa, J.S. Roberts
Single-mode surface-emitting quantum-cascade lasers
Applied Physics Letters 86 (2005) 211102

V. Moreau, A.B. Krysa, M. Bahriz, L.R. Wilson, R. Colombelli, D.G. Revin, F. Julien, J.W. Cockburn, J.S. Roberts
Pulsed operation of long-wavelength (λ≈11.3 µm) MOVPE-grown quantum cascade lasers up to 350 K
Electronics Letters 41 (2005) 1175-1176

R.P. Green, L.R. Wilson, E.A. Zibik, D.G. Revin, J.W. Cockburn, C. Pflügl, W. Schrenk, G. Strasser,
A.B. Krysa, J.S. Roberts, C.M. Tey and A.G. Cullis
High performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy
Applied Physics Letters 85 (2004) 5529-5531

A.B. Krysa, J.S. Roberts, R.P. Green, L.R. Wilson, H. Page, M. Garcia, J.W. Cockburn
MOVPE grown quantum cascade lasers operating at ~9µm wavelength
Journal of Crystal Growth 272 (2004) 682-685

L.R. Wilson, R.P. Green, A.B. Krysa, J.S. Roberts, W.H. Ng, D.G. Revin, C. Pflügl, W. Schrenk, G. Strasser, J.W. Cockburn
High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy
Proceedings of SPIE 5564 (2004) 156-163

Yu.V. Bondarev, V.I. Kozlovsky, A.B. Krysa, J.S. Roberts, Ya.K. Skasyrsky
Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure
Journal of Crystal Growth 272 (2004) 559-563

R.P. Green, A.B. Krysa, J.S. Roberts, D.G. Revin, L.R. Wilson, E.A. Zibik, W.H. Ng, J.W. Cockburn
Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy
Applied Physics Letters 83 (2003) 1921-1923

(Invited paper)
C. P. Liu, A. J. Seeds, J. S. Chadha, P. N. Stavrinou, G. Parry, M. Whitehead, A.B. Krysa, J. S. Roberts
Design, Fabrication and Characterisation of Normal-Incidence 1.56-mm Multiple-Quantum-Well Asymmetric Fabry-Perot Modulators for Passive Picocells
IEICE Trans. on Electronics E86-C (2003) 1281

V.I. Kozlovsky, A.B. Krysa, Yu.V. Korostelin, Yu. G. Sadofyev
MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(100) and ZnTe(100) substrates
Journal of Crystal Growth 214-215 (2000) 35-39

A.B. Krysa, Yu.V. Korostelin, V.I. Kozlovsky, P.V. Shapkin, H. Kalisch, R. Rüland, M. Heuken, K. Heime
ZnSe/ZnMgSSe structures on ZnSSe substrates
Journal of Crystal Growth 214-215 (2000) 355-358

V.I. Kozlovsky, A.B. Krysa, W. Taudt, M. Heuken
Electron beam activation of acceptors in MOVPE ZnSe:N
Journal of Crystal Growth 184-185 (1998) 435-439

V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U.K. Mishra, L. Coldren, S. DenBaars, M. D. Tiberi, T. George
Electron Beam Pumped MQW InGaN/GaN Laser
MRS Internet Journal of Nitride Semiconductor Research 2 (1997) art.38

V.I. Kozlovskii, Yu.V. Korostelin, A.B. Krysa, Ya.K. Skasyrskii, P.V. Shapkin
Acceptor passivation with hydrogen in ZnSe single crystals
Bulletin of the Lebedev Physics Institute, No.2 (1996) 33-37