Mr Kenneth KennedyDr Kenneth Kennedy

EPSRC Post Doctoral Prize Fellow

email : k.kennedy@sheffield.ac.uk

tel: +44 (0) 114 222 5048


Received the B.Sc. degree in Optoelectronics from Heriot-Watt University, Edinburgh, UK, in 1999. He immediately joined Agilent Technologies Ltd, Ipswich, UK, as a manufacturing / process engineer working on telecom wavelength emitters and detectors. In 2004 he joined Agilent Technologies Ltd, Singapore as a technology transfer engineer. In 2009 he received the Ph.D degree (Electronic and Electrical Engineering) at the University of Sheffield, UK. After graduating he worked for the National Centre for III-V Technologies, at the University of Sheffield before he was awarded with a Post Doctoral Prize Fellowship, funded by the EPSRC, working mainly on quantum cascade laser technologies.

Research Interests

  • Mid-infrared quantum cascade lasers (QCLs) including single-mode DFB lasers
  • Quantum Dot (QD) Lasers and Superluminescent Diodes (SLEDs)
  • Semiconductor device fabrication technologies

Recent Selected Publications

High peak power λ ~ 3.3 and 3.5μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K
J. P. Commin, D. G. Revin, S. Y. Zhang, A. B. Krysa, K. Kennedy, and J. W. Cockburn.
Appl. Phys. Lett. 97, 031108 (2010)

Room Temperature operation of Discrete Mode InGaAs/AlAsSb Quantum Cascade Laser with Emission at λ = 3.3μm
S. Y. Zhang, D. G. Revin, J. W. Cockburn, K. Kennedy, A. B. Krysa, M. Hopkinson
Appl. Phys. Lett. 94, 031106 (2009)

λ ~ 3.1μm room temperature InGaAs/AlAsSb/InP quantum cascade lasers
S. Y. Zhang, D. G. Revin, J. W. Cockburn, K. Kennedy, A. B. Krysa, M. Hopkinson
Appl. Phys. Lett. 94, 031106, 2009

Characterization of Quantum-Cascade Lasers using Single-Pass Transmission Spectroscopy
A. O. Dirisu, D. G. Revin, Zhijun Liu, K. Kennedy, J. W. Cockburn, C. F. Gmachl
IEEE J. Quant. Elect, 2009, 45, 6, pp. 586 - 593

Single grating period quantum cascade laser array with broad wavelength tuning range
Kennedy, K. Revin, D.G. Commin, J.P. Krysa, A.B. Semtsiv, M.P. Chashnikova, M. Masselink, W.T. Cockburn, J.W. Hogg, R.A.
IEEE Elect. Lett. 2008, 44, 22, pp. 1306-1307

Optical and thermal characteristics of narrow-ridge quantum-cascade lasers
M. Wienold, M. P. Semtsiv, I. Bayrakli, W. T. Masselink, M. Ziegler, K. Kennedy, and R. Hogg.
J. Appl. Phys. 103, 083113 (2008)

Fabrication and characterization of InP-based quantum cascade distributed feedback lasers with ICP etched lateral gratings
K. Kennedy, D. G. Revin, A. B. Krysa, J. S. Roberts, K. M. Groom, L. R. Wilson, J. W. Cockburn and R. A. Hogg
Japanese J. of Appl. Physics, (2007)

Fabrication of v-groove gratings in InP by inductively coupled plasma etching with SiCl4/Ar
K Kennedy, K.M. Groom, R.A.Hogg
Semi. Science and Tech, 21, L1-L5, (2006)

High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings
K. Kennedy, D. G. Revin, A. B. Krysa, J. S. Roberts, K. M. Groom, L. R. Wilson, J. W. Cockburn and R. A. Hogg
Applied Physics Letters, 89, 201117, (2006)

Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode
S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg
Journal of Applied Physics, 100, 103105 (2006)