Dr. Ziyang ZhangDr. Ziyang Zhang

Research Associate

email : ziyang.zhang@shef.ac.uk

tel: +44 (0) 114 222 5161


Ziyang Zhang received his Ph.D. from The Institute of Semiconductor, Chinese Academy of Sciences, 2003. From Aug, 2003, he was a Japan Science and Technology agency Research Fellow working in Tokyo Institute of Technology. He subsequently was awarded an Alberta Ingenuity Postdoctoral Fellowship working in the University of Alberta for two years. He joined the Electronic and Electrical Engineering Dept at Sheffield in Aug, 2006.

Research Interests

  • MBE growth of low dimensional semiconductor materials (e.g., quantum wells, quantum wires and quantum dots)
  • Fabrication of opto-electronic devices including LED, superluminescent LED, laser diodes and photonic integration devices
  • Post-growth intermixing process for opto-electronic devices application

Recent Selected Publications:

Simultaneous three-state lasing in a quantum dot laser at room temperature
Z.Y. Zhang, Q. Jiang, and R.A. Hogg
Electron. Lett. 46, 1155, 2010

High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm
Q. Jiang, Z.Y. Zhang, M. Hopkinson and R.A. Hogg
Electron. Lett., 46, 295, 2010

Self-assembled Quantum-dot Superluminescent Light Emitting Diodes
Z.Y. Zhang, R.A. Hogg, X.Q. Lv, Z.G. Wang
Adv. Opt. Photon. (Invited review paper), 2, 201, 2010

Effects of Intermixing on Modulation p-doped Quantum Dot Superluminescent Light Emitting Diodes
Z.Y. Zhang, Q. Jiang, M. Hopkinson and R.A. Hogg
Opt. Express, 18, 7055, 2010

Analysis of 1.2μm InGaAs/GaAs Quantum Dot Laser for High Power Applications
Q. Jiang, Z.Y. Zhang, D.T. Childs and R.A. Hogg
J. Appl. Phys. 106, 073102, 2009

A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap
Z Y Zhang, Q Jiang, I J Luxmoore and R A Hogg
Nanotechnology, 20, 055204, 2009

Tunable Interband and Intersubband Transitions in Modulation C-doped InGaAs/GaAs Quantum Dot Lasers by Post-growth Annealing Process
Z.Y. Zhang, Q. Jiang and R.A. Hogg
Appl. Phys. Lett. 93, 071111, 2008

Realization of Extremely Broadband Quantum Dot Superluminescent Light Emitting Diodes by Rapid Thermal Annealing Process
Z.Y. Zhang, R.A. Hogg, B. Xu, P. Jin and Z.G. Wang
Opt. Lett. 33, 1210, 2008

High Power Quantum Dot Superluminescent LED with Broadband Drive Current Insensitive Emission Spectra Using a Tapered Active Region
Z.Y. Zhang, R.A. Hogg, P. Jin, T.L. Choi, B. Xu, and Z.G. Wang
IEEE Photon. Technol. Lett., 20, 784, 2008

Effect of Facet Angle on Effective Facet Reflectivity and Operating Characteristics of Quantum Dot Edge Emitting Lasers and Superluminescent Light Emitting Diodes
Z.Y. Zhang, I. J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D. T. Childs, M. Hopkinson, A.G. Cullis, R.A. Hogg
Appl. Phys. Lett. 91, 081112, 2007

Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching
Z.Y. Zhang, I.J. Luxmoore, Q. Jiang, H.Y. Liu, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, and R.A. Hogg
Electron. Lett. 43, 587, 2007