TY  - JOUR

T1  - Raman scattering by GaInAs-InP quantum wells: effects of free carriers and impurities

JO  - Semiconductor Science and Technology

UR  - https://doi.org/10.1088/0268-1242/2/12/011

PY  - 1999/01/01

AU  - Mowbray DJ

AU  - Hayes W

AU  - Bland JAC

AU  - Skolnick MS

AU  - Bass SJ

ED  - 

DO  - DOI: 10.1088/0268-1242/2/12/011

PB  - IOP Publishing

VL  - 2

IS  - 12

SP  - 822

EP  - 827

Y2  - 2025/11/24

ER  -