@article{article, title  = {{Impact of an underlying 2DEG on the performance of a p-channel MOSFET in GaN}},

 publisher = {{American Chemical Society (ACS)}},

 url = {{https://eprints.whiterose.ac.uk/id/eprint/201381 }},

 year = {{2023}},

 month = {{6}},

 author = {{Zhou J and Do H-B and De Souza MM}},

 doi = {{10.1021/acsaelm.3c00350}},

 volume = {{5}},

 journal = {{ACS Applied Electronic Materials}},

 issue = {{6}},

 pages = {{3309-3315}},

 note = {{Accessed on 2025/12/07}}}