TY  - JOUR

T1  - Impact of an underlying 2DEG on the performance of a p-channel MOSFET in GaN

JO  - ACS Applied Electronic Materials

UR  - https://eprints.whiterose.ac.uk/id/eprint/201381

PY  - 2023/06/08

AU  - Zhou J

AU  - Do H-B

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1021/acsaelm.3c00350

PB  - American Chemical Society (ACS)

VL  - 5

IS  - 6

SP  - 3309

EP  - 3315

Y2  - 2025/11/19

ER  -