@article{article, title  = {{Gate-Oxide Degradation in SiC MOSFETs: Common-Mode Noise as a Precursor, Theoretical Basis and Experimental Validation}},

 publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}},

 url = {{https://doi.org/10.1109/tpel.2026.3709666 }},

 year = {{2026}},

 month = {{7}},

 author = {{Jazayeri M and Mehran K and Davidson J and Naghibi J and Mohsenzade S}},

 doi = {{10.1109/tpel.2026.3709666}},

 journal = {{IEEE Transactions on Power Electronics}},

 pages = {{1-12}},

 note = {{Accessed on 2026/07/28}}}