TY  - JOUR

T1  - Gate-Oxide Degradation in SiC MOSFETs: Common-Mode Noise as a Precursor, Theoretical Basis and Experimental Validation

JO  - IEEE Transactions on Power Electronics

UR  - https://doi.org/10.1109/tpel.2026.3709666

PY  - 2026/07/03

AU  - Jazayeri M

AU  - Mehran K

AU  - Davidson J

AU  - Naghibi J

AU  - Mohsenzade S

ED  - 

DO  - DOI: 10.1109/tpel.2026.3709666

PB  - Institute of Electrical and Electronics Engineers (IEEE)

SP  - 1

EP  - 12

Y2  - 2026/07/28

ER  -