TY  - JOUR

T1  - An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC

JO  - IEEE Electron Device Letters

UR  - https://eprints.whiterose.ac.uk/id/eprint/121448

UR  - https://doi.org/10.1109/LED.2017.2747898

PY  - 2017/08/31

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/LED.2017.2747898

PB  - Institute of Electrical and Electronics Engineers

VL  - 38

IS  - 10

SP  - 1449

EP  - 1452

Y2  - 2025/12/07

ER  -