TY  - JOUR

T1  - ASYMMETRIC CHARACTERISTICS OF INGAP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

JO  - SEMICOND SCI TECH

PY  - 1999/01/01

AU  - LEE TW

AU  - HOUSTON PA

AU  - KUMAR R

AU  - HILL G

AU  - HOPKINSON M

ED  - 

VL  - 7

IS  - 3

SP  - 425

EP  - 428

Y2  - 2025/11/28

ER  -