TY  - CONF

T1  - Gate Current Based Health Monitoring Method for Gate Oxide Degradation in SiC MOSFETs

JO  - 2025 Energy Conversion Congress & Expo Europe (ECCE Europe)

UR  - https://doi.org/10.1109/ecce-europe62795.2025.11238483

PY  - 2025/09/01

AU  - Jazayeri M

AU  - Mohsenzade S

AU  - Naghibi J

AU  - Mehran K

AU  - Davidson J

ED  - 

DO  - DOI: 10.1109/ecce-europe62795.2025.11238483

PB  - IEEE

SP  - 1

EP  - 5

Y2  - 2025/12/17

ER  -