@inproceedings{inproceedings, title  = {{On the effect of SiC power MOSFET gate oxide degradation in high frequency phase leg-based applications}},

 publisher = {{Institute of Electrical and Electronics Engineers}},

 url = {{https://eprints.whiterose.ac.uk/id/eprint/192716 }},

 year = {{2022}},

 month = {{11}},

 author = {{Naghibi J and Mohsenzade S and Iqbal S and Mehran K and Foster MP}},

 doi = {{10.1109/ECCE50734.2022.9947441}},

 isbn = {{978-1-7281-9387-8}},

 journal = {{IEEE Energy Conversion Congress and Expo - ECCE 2022}},

 pages = {{1-6}},

 note = {{Accessed on 2025/11/23}}}