TY  - CONF

T1  - On the effect of SiC power MOSFET gate oxide degradation in high frequency phase leg-based applications

JO  - IEEE Energy Conversion Congress and Expo - ECCE 2022

UR  - https://eprints.whiterose.ac.uk/id/eprint/192716

PY  - 2022/11/30

AU  - Naghibi J

AU  - Mohsenzade S

AU  - Iqbal S

AU  - Mehran K

AU  - Foster MP

ED  - 

DO  - DOI: 10.1109/ECCE50734.2022.9947441

PB  - Institute of Electrical and Electronics Engineers

SN  - 978-1-7281-9387-8

SP  - 1

EP  - 6

Y2  - 2025/11/23

ER  -