TY  - JOUR

T1  - Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology

JO  - IEEE Transactions on Electron Devices

UR  - https://eprints.whiterose.ac.uk/id/eprint/166945

PY  - 2020/11/05

AU  - Luo P

AU  - Madathil SNE

ED  - 

DO  - DOI: 10.1109/TED.2020.3033268

PB  - Institute of Electrical and Electronics Engineers

VL  - 67

IS  - 12

SP  - 5621

EP  - 5627

Y2  - 2025/11/24

ER  -