TY  - CONF

T1  - Bandgap Engineering of GaAsBi Alloy for Emission of up to 1.52 µm

JO  - 2018 IEEE International Conference on Semiconductor Electronics (ICSE)

UR  - https://doi.org/10.1109/smelec.2018.8481336

PY  - 2018/10/03

AU  - Mohmad AR

AU  - David JPK

ED  - 

DO  - DOI: 10.1109/smelec.2018.8481336

PB  - IEEE

SP  - 177

EP  - 179

Y2  - 2025/11/19

ER  -