TY  - CONF

T1  - A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform

JO  - 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

UR  - https://eprints.whiterose.ac.uk/id/eprint/209587

PY  - 2023/04/26

AU  - Zhou J

AU  - Do H-B

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/edtm55494.2023.10103055

PB  - Institute of Electrical and Electronics Engineers

SN  - 9798350332520

SP  - 1

EP  - 3

Y2  - 2025/12/07

ER  -