TY  - JOUR

T1  - Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

JO  - IET Power Electronics

UR  - https://eprints.whiterose.ac.uk/id/eprint/144832

PY  - 2018/08/29

AU  - Unni V

AU  - Long HY

AU  - Yan H

AU  - Nakajima A

AU  - Kawai H

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1049/iet-pel.2018.5583

PB  - Institution of Engineering and Technology

VL  - 11

IS  - 14

SP  - 2198

EP  - 2203

Y2  - 2025/11/24

ER  -