@inproceedings{inproceedings, title  = {{A comparison of ∂-doped quantum well structures for power FET applications}},

 publisher = {{IEEE}},

 url = {{https://doi.org/10.1109/hkedm.1996.566308 }},

 year = {{1996}},

 month = {{12}},

 author = {{Roberts JM and Harris JJ and Hopkinson M and Roberts C}},

 doi = {{10.1109/hkedm.1996.566308}},

 journal = {{Proceedings 1996 IEEE Hong Kong Electron Devices Meeting}},

 pages = {{53-55}},

 note = {{Accessed on 2025/11/28}}}