TY  - CONF

T1  - A comparison of ∂-doped quantum well structures for power FET applications

JO  - Proceedings 1996 IEEE Hong Kong Electron Devices Meeting

UR  - https://doi.org/10.1109/hkedm.1996.566308

PY  - 1996/12/01

AU  - Roberts JM

AU  - Harris JJ

AU  - Hopkinson M

AU  - Roberts C

ED  - 

DO  - DOI: 10.1109/hkedm.1996.566308

PB  - IEEE

SP  - 53

EP  - 55

Y2  - 2025/11/28

ER  -