TY  - JOUR

T1  - Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

JO  - Semiconductor Science and Technology

UR  - https://eprints.whiterose.ac.uk/id/eprint/146062

PY  - 2018/08/20

AU  - Richards RD

AU  - Rockett TBO

AU  - Nawawi MRM

AU  - Harun F

AU  - Mellor A

AU  - Wilson T

AU  - Christou C

AU  - Chen S

AU  - David JPR

ED  - 

DO  - DOI: 10.1088/1361-6641/aad72a

PB  - IOP Publishing

VL  - 33

IS  - 9

Y2  - 2025/11/19

ER  -