TY  - JOUR

T1  - InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

JO  - Electronics Letters

UR  - https://doi.org/10.1049/el:20040015

PY  - 2004/01/08

AU  - Hooper SE

AU  - Kauer M

AU  - Bousquet V

AU  - Johnson K

AU  - Barnes JM

AU  - Heffernan J

ED  - 

DO  - DOI: 10.1049/el:20040015

PB  - Institution of Engineering and Technology (IET)

VL  - 40

IS  - 1

SP  - 33

EP  - 34

Y2  - 2025/11/25

ER  -