@inproceedings{inproceedings, title  = {{Evaluation of drain-source voltage in switch transient time intervals as gate oxide degradation precursor of SiC power MOSFETs}},

 publisher = {{IEEE}},

 url = {{https://eprints.whiterose.ac.uk/id/eprint/192712 https://ieeexplore.ieee.org/document/9907189 }},

 year = {{2022}},

 month = {{10}},

 author = {{Naghibi J and Mohsenzade S and Mehran K and Foster M}},

 isbn = {{9781665487009}},

 journal = {{Proceedings of 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)}},

 note = {{Accessed on 2025/11/23}}}