TY  - CONF

T1  - Evaluation of drain-source voltage in switch transient time intervals as gate oxide degradation precursor of SiC power MOSFETs

CY  - Hannover, Germany

JO  - Proceedings of 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

UR  - https://eprints.whiterose.ac.uk/id/eprint/192712

UR  - https://ieeexplore.ieee.org/document/9907189

PY  - 2022/10/17

AU  - Naghibi J

AU  - Mohsenzade S

AU  - Mehran K

AU  - Foster M

ED  - 

PB  - IEEE

SN  - 9781665487009

Y2  - 2025/11/23

ER  -