TY  - CONF

T1  - Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

JO  - 2016 IEEE International Electron Devices Meeting (IEDM)

PY  - 2016/12/05

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/IEDM.2016.7838368

Y2  - 2025/12/07

ER  -