TY  - JOUR

T1  - The world’s first high voltage GaN-on-Diamond power semiconductor devices

JO  - Solid-State Electronics

UR  - https://eprints.whiterose.ac.uk/id/eprint/107228

UR  - http://doi.org/10.1016/j.sse.2016.07.022

PY  - 2016/11/01

AU  - Baltynov T

AU  - Unni V

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1016/j.sse.2016.07.022

PB  - Elsevier

VL  - 125

SP  - 111

EP  - 117

Y2  - 2025/11/24

ER  -