@article{article, title  = {{High-power InGaN light emitting diodes grown by molecular beam epitaxy}},

 publisher = {{Institution of Engineering and Technology (IET)}},

 url = {{https://doi.org/10.1049/el:20046144 }},

 year = {{2004}},

 month = {{9}},

 author = {{Johnson K and Bousquet V and Hooper SE and Kauer M and Zellweger C and Heffernan J}},

 doi = {{10.1049/el:20046144}},

 volume = {{40}},

 journal = {{Electronics Letters}},

 issue = {{20}},

 pages = {{1299-1300}},

 note = {{Accessed on 2025/11/25}}}