@inproceedings{inproceedings, title  = {{A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure}},

 publisher = {{IEEE}},

 url = {{https://doi.org/10.1109/ispsd.1990.991068 }},

 year = {{1990}},

 month = {{12}},

 author = {{Huang Q and Sankara Narayanan EM and Kwan KW and Amaratunga G and Milne WI}},

 doi = {{10.1109/ispsd.1990.991068}},

 journal = {{Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.}},

 pages = {{102-107}},

 note = {{Accessed on 2025/11/24}}}