TY  - CONF

T1  - A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

JO  - Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

UR  - https://doi.org/10.1109/ispsd.1990.991068

PY  - 1990/12/01

AU  - Huang Q

AU  - Sankara Narayanan EM

AU  - Kwan KW

AU  - Amaratunga G

AU  - Milne WI

ED  - 

DO  - DOI: 10.1109/ispsd.1990.991068

PB  - IEEE

SP  - 102

EP  - 107

Y2  - 2025/11/24

ER  -