TY  - JOUR

T1  - Absorption properties of GaAsBi based p–i–n heterojunction diodes

JO  - Semiconductor Science and Technology

UR  - https://doi.org/10.1088/0268-1242/30/9/094004

PY  - 2015/06/22

AU  - Zhou Z

AU  - Mendes DF

AU  - Richards RD

AU  - Bastiman F

AU  - David JPR

ED  - 

DO  - DOI: 10.1088/0268-1242/30/9/094004

PB  - IOP Publishing

VL  - 30

IS  - 9

SP  - 094004

EP  - 094004

Y2  - 2025/11/19

ER  -