TY  - JOUR

T1  - Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

JO  - Journal of Applied Physics

UR  - https://eprints.whiterose.ac.uk/id/eprint/91482

UR  - http://dx.doi.org/10.1063/1.4933276

PY  - 2015/10/16

AU  - Bazioti C

AU  - Papadomanolaki E

AU  - Kehagias T

AU  - Walther T

AU  - Smalc-Koziorowska J

AU  - Pavlidou E

AU  - Komninou P

AU  - Karakostas T

AU  - Iliopoulos E

AU  - Dimitrakopulos GP

ED  - 

DO  - DOI: 10.1063/1.4933276

PB  - American Institute of Physics 

VL  - 118

IS  - 15

Y2  - 2025/12/01

ER  -