TY  - JOUR

T1  - High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy

JO  - Electronics Letters

UR  - https://doi.org/10.1049/el:20083456

PY  - 2008/02/28

AU  - Tan WS

AU  - Kauer M

AU  - Hooper SE

AU  - Barnes JM

AU  - Rossetti M

AU  - Smeeton TM

AU  - Bousquet V

AU  - Heffernan J

ED  - 

DO  - DOI: 10.1049/el:20083456

PB  - Institution of Engineering and Technology (IET)

VL  - 44

IS  - 5

SP  - 351

EP  - 353

Y2  - 2025/11/25

ER  -