TY  - JOUR

T1  - 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

JO  - Applied Physics Letters

UR  - https://doi.org/10.1063/1.4906994

PY  - 2015/01/28

AU  - Bonato L

AU  - Sala EM

AU  - Stracke G

AU  - Nowozin T

AU  - Strittmatter A

AU  - Ajour MN

AU  - Daqrouq K

AU  - Bimberg D

ED  - 

DO  - DOI: 10.1063/1.4906994

PB  - AIP Publishing

VL  - 106

IS  - 4

Y2  - 2025/12/13

ER  -