@inproceedings{inproceedings, title  = {{2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate}},

 publisher = {{IEEE}},

 url = {{https://doi.org/10.1109/ispsd.2014.6856022 }},

 year = {{2014}},

 month = {{7}},

 author = {{Unni V and Long H and Sweet M and Balachandran A and Narayanan EMS and Nakajima A and Kawai H}},

 doi = {{10.1109/ispsd.2014.6856022}},

 journal = {{2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)}},

 pages = {{245-248}},

 note = {{Accessed on 2025/11/24}}}