TY  - CONF

T1  - 2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

JO  - 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

UR  - https://doi.org/10.1109/ispsd.2014.6856022

PY  - 2014/07/17

AU  - Unni V

AU  - Long H

AU  - Sweet M

AU  - Balachandran A

AU  - Narayanan EMS

AU  - Nakajima A

AU  - Kawai H

ED  - 

DO  - DOI: 10.1109/ispsd.2014.6856022

PB  - IEEE

SP  - 245

EP  - 248

Y2  - 2025/11/24

ER  -